X-On Electronics has gained recognition as a prominent supplier of IPD135N03LG MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD135N03LG MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD135N03LG Infineon

IPD135N03LG electronic component of Infineon
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See Product Specifications
Part No.IPD135N03LG
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Datasheet: IPD135N03LG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4279 ea
Line Total: USD 0.43 
Availability - 35478
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4737
10 : USD 0.3224

900
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 371
Multiples : 1
371 : USD 0.3271

2394
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5707
10 : USD 0.4543
30 : USD 0.397
100 : USD 0.3398
500 : USD 0.3054
1000 : USD 0.2863

35478
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4279
10 : USD 0.4279
100 : USD 0.3223
500 : USD 0.2893
1000 : USD 0.2893
2500 : USD 0.2816
5000 : USD 0.2772
25000 : USD 0.2695

804
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.246
5 : USD 0.6048
25 : USD 0.532
37 : USD 0.4578
101 : USD 0.4326

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IPD135N03LG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD135N03LG and other electronic components in the MOSFETs category and beyond.

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IPD135N03L G MOSFET DPAK OptiMOS 3 Power-Transistor , 30 V tab Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters 1) Qualified according to JEDEC for target applications N-channel, logic level Excellent gate charge x R product (FOM) 2 DS(on) 1 Very low on-resistance R DS(on) Avalanche rated 3 Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Drain Pin 2, Tab Table 1 Key Performance Parameters Parameter Value Unit Gate Pin 1 V 30 V DS Source R 13.5 m DS(on),max Pin 3 I 30 A D Type / Ordering Code Package Marking Related Links IPD135N03L G PG-TO252-3 135N03L - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.2, 2020-09-14 OptiMOS 3 Power-Transistor, 30 V IPD135N03L G Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.2, 2020-09-14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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