About MOSFET

On Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTGD4167CT1G


MOSFET COMP 30V 2.9A 0.090 TSOP6
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 5820
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USD 0.2263
Multiples of: 3000

2.6 A , 1.9 A30 V90 mOhms , 300 mOhmsN And P - Channel 500 mV- 55 C+ 150 C1.1 WSmd/SmtTSOP - 6ReelSi2 Channel4.5 v , - 2.5 V3.7 nC , 3.9 nCEnhancement  
NTRV4101PT1G


ON Semiconductor MOSFET PFET 20V 3.2A 85MO
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ON Semiconductor Availability : 5820
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USD 0.2433
Multiples of: 3000

- 2.4 A- 20 V70 mOhmsP - Channel8 V - 55 C+ 150 C730 mWSmd/SmtSOT - 23 - 3Reel   7.5 nC   
FDMA291P


Transistor: P-MOSFET; unipolar; -20V; -6.6A; 2.4W; MicroFET
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ON Semiconductor Availability : 5820
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USD 0.2925
Multiples of: 3000

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FDMC86262P


MOSFET PT5 150V/25V Pch PowerTrench Mosfet
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ON Semiconductor Availability : 5820
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USD 0.5625
Multiples of: 3000

- 2 A- 150 V541 mOhmsP - Channel - 4 V- 55 C+ 150 C40 WSmd/SmtMLP - 8ReelSi1 Channel+/- 25 V9.1 nCEnhancement Powertrench
FDMS8D8N15C


MOSFET FET ENGR DEV-NOT REL
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ON Semiconductor Availability : 5820
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USD 1.8749
Multiples of: 1

85 A150 V8.8 mOhmsN - Channel 2.5 V- 55 C+ 150 C132 WSmd/SmtPQFN - 8Cut TapeSi1 Channel20 V50 nCEnhancement  
NVMFS5C426NLT1G


MOSFET 40V 1.2 MOHM T6 S08FL SIN
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ON Semiconductor Availability : 5820
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USD 2.1521
Multiples of: 1500

237 A40 V1.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C128 WSmd/SmtSO - 8FL - 8Cut TapeSi1 Channel20 V93 nCEnhancement  
NTMFD5C446NLT1G


MOSFET T6 40V LL S08FL DS
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ON Semiconductor Availability : 5820
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USD 3.6685
Multiples of: 1

145 A40 V2.65 mOhmsN - Channel 1.2 V- 55 C+ 175 C125 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V54 nCEnhancement  
FDMC010N08C


MOSFET PTNG 80/20V IN 51A 10 mOhm
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ON Semiconductor Availability : 5794
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USD 1.5381
Multiples of: 1

51 A80 V10 mOhmsN - Channel 2 V- 55 C+ 150 C52 WSmd/SmtPOWER - 33 - 8Cut TapeSi1 Channel20 V22 nCEnhancement  
Hot FDMS7656AS


MOSFET PT7 30/20V Nch PowerTrench SyncFET
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ON Semiconductor Availability : 5752
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USD 0.5414
Multiples of: 1

49 A30 V1.8 mOhmsN - Channel  - 55 C+ 150 C96 WSmd/SmtPOWER - 56ReelSi1 Channel20 V   Powertrench Syncfet
FDN308P


Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; SuperSOT-3
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ON Semiconductor Availability : 5741
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USD 0.1777
Multiples of: 1

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