About MOSFET

Toshiba MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK290P60Y,RQ


MOSFET N-Ch DTMOSV 650V 100W 730pF 11.5A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 5
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USD 0.6843

Multiples of: 1

11.5 A600 V230 mOhmsN - Channel 3 V-+ 150 C100 WSmd/SmtDPAK - 3Cut TapeSi1 Channel30 V25 nCEnhancement Dtmosv
TK25E60X,S1X


N-Channel 600 V 25A (Ta) 180W (Tc) Through Hole TO-220
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Toshiba Availability : 5
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USD 2.3493

Multiples of: 1

25 A600 V105 mOhmsN - Channel 2.5 V- 55 C+ 150 C180 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V40 nCEnhancement Dtmosiv
705463DB


2SK1544 SEMICONDUCTOR T/HOLE
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Toshiba Availability : 5
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by Mon. 26 Aug
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USD 13.1821

Multiples of: 1

25 A500 V200 mOhmsN - Channel+/- 30 V - 55 C+ 150 C200 WThrough HoleTO - 3PL        
TK7P60W,RVQ


Toshiba MOSFET N-Ch 7A 60W FET 600V 490pF 15nC
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Toshiba Availability : 4
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USD 0.9278

Multiples of: 1

7 A600 V500 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C60 WSmd/SmtDPAK - 3ReelSi1 Channel30 V15 nCEnhancement  
TK20N60W,S1VF


MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 4
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USD 3.732

Multiples of: 1

20 A600 V130 mOhmsN - Channel30 V3.7 V- 55 C+ 150 C165 WThrough HoleTO - 247 - 3 Si1 Channel30 V48 nCEnhancement Dtmosiv
TK39A60W,S4VX(M


TO-220 MOSFETs ROHS
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Toshiba Availability : 4
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USD 12.2922

Multiples of: 1

                   
SSM3K35CT,L3F(T


MOSFET N Trench 20V 180mA 1V @ 1mA 3 Ω @ 50mA,4V CST3 RoHS
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Toshiba Availability : 3
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USD 0.0559

Multiples of: 10

                   
TK380A60Y,S4X


MOSFET N-Ch DTMOSV 600V 30W 590pF 9.7A
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Toshiba Availability : 3
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USD 0.6427

Multiples of: 1

9.7 A600 V290 mOhmsN - Channel 3 V-+ 150 C30 WThrough HoleTO - 220SIS - 3TubeSi1 Channel30 V20 nCEnhancement Dtmosv
SSM3K44FS,LF


MOSFET LowON Res MOSFET ID=.1A VDSS=30V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 2
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USD 0.0422

Multiples of: 1

100 mA30 V2.2 OhmsN - Channel 800 mV + 150 C150 mWSmd/SmtSOT - 416 - 3Cut TapeSi1 Channel20 V Enhancement  
TK100E10N1,S1X


Toshiba MOSFET 100V N-Ch PWR FET 8800pF 140nC 207A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 2
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USD 1.9324

Multiples of: 1

207 A100 V3.4 mOhmsN - Channel     Through HoleTO - 220 - 3ReelSi1 Channel10 V140 nC  Dtmosiv
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