Hot
|
TSM60NB900CP ROG
Warehouse Options
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Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; DPAK
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
|
Taiwan Semiconductor
|
Availability : 0
Ship by 6 to 16 Weeks
|
USD 1.3104
|
Multiples of:
1
| | | | | | | | | | | | | | | | | | | |
Hot
|
TSM70N380CI
Warehouse Options
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MOSFET 700V Power MOSFET Superjunction N-chan
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Taiwan Semiconductor
|
Availability : 0
Ship by 6 to 16 Weeks
|
USD 1.313
|
Multiples of:
4000
| 11 A | 700 V | 330 mOhms | N - Channel | | 2 V | - 55 C | + 150 C | 33 W | Through Hole | TO - 220 - 3 | Tube | Si | 1 Channel | 30 V | 18.8 nC | Enhancement | | |
Hot
|
TSM70N750CH C5G
Warehouse Options
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Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Taiwan Semiconductor
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Availability : 0
Ship by 6 to 16 Weeks
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USD 1.3272
|
Multiples of:
1
| | | | | | | | | | | | | | | | | | | |
Hot
|
TSM60NB600CP ROG
Warehouse Options
|
Transistor: N-MOSFET; unipolar; 600V; 4.4A; 63W; DPAK
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
|
Taiwan Semiconductor
|
Availability : 0
Ship by 6 to 16 Weeks
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USD 1.372
|
Multiples of:
1
| | | | | | | | | | | | | | | | | | | |
Hot
|
TSM60N1R4CP ROG
Warehouse Options
|
Transistor: N-MOSFET; unipolar; 600V; 3.3A; 38W; DPAK
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Taiwan Semiconductor
|
Availability : 0
Ship by 6 to 16 Weeks
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USD 1.3804
|
Multiples of:
1
| | | | | | | | | | | | | | | | | | | |
Hot
|
TSM4925DCS RLG
Warehouse Options
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MOSFET -30V -7.1A Dual P-Channel Power MOSFET
Large
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Taiwan Semiconductor
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Availability : 0
Ship by 6 to 16 Weeks
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USD 1.381
|
Multiples of:
5000
| | | | | | | | | | | | Cut Tape | | | | | | | |
Hot
|
TSM650N15CS RLG
Warehouse Options
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MOSFET 150V 9A Single N-Channel Power MOSFET
Large
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Taiwan Semiconductor
|
Availability : 0
Ship by 6 to 16 Weeks
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USD 1.4294
|
Multiples of:
1
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Hot
|
TSM60N600CP
Warehouse Options
|
MOSFET Power MOSFET, N-CHAN 600V, 8A, 600mOhm
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
|
Taiwan Semiconductor
|
Availability : 0
Ship by 6 to 16 Weeks
|
USD 1.4357
|
Multiples of:
5000
| 8 A | 600 V | 600 mOhms | N - Channel | | 4 V | - 55 C | + 150 C | 83 W | Smd/Smt | TO - 252 - 3 | Tube | Si | 1 Channel | +/- 30 V | 13 nC | Enhancement | | |
Hot
|
TSM60N600CH
Warehouse Options
|
MOSFET Power MOSFET, N-CHAN 600V, 8A, 600mOhm
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
|
Taiwan Semiconductor
|
Availability : 0
Ship by 6 to 16 Weeks
|
USD 1.4357
|
Multiples of:
15000
| 8 A | 600 V | 600 mOhms | N - Channel | | 4 V | - 55 C | + 150 C | 83 W | Through Hole | TO - 251 - 3 | Tube | Si | 1 Channel | +/- 30 V | 13 nC | Enhancement | | |
Hot
|
TSM160N10CZ
Warehouse Options
|
MOSFET Power MOSFET, N-CHAN 100V, 160A, 5.5mOhm
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
|
Taiwan Semiconductor
|
Availability : 0
Ship by 6 to 16 Weeks
|
USD 1.4431
|
Multiples of:
4000
| 160 A | 100 V | 5.5 mOhms | N - Channel | | 3 V | - 55 C | + 175 C | 300 W | Through Hole | TO - 220 - 3 | Tube | Si | 1 Channel | +/- 20 V | 154 nC | Enhancement | | |