About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQ3427AEEV-T1_GE3


MOSFET -60V Vds -20V Vgs AEC-Q101 Qualified
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Vishay Availability : 585722
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USD 0.2829
Multiples of: 1

5.3 A60 V95 mOhmsP - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V15.3 nCEnhancementAEC - Q101TrenchFET
DMN6140L-7


Diodes Incorporated MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A
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Diodes Incorporated Availability : 584910
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USD 0.052
Multiples of: 3000

2.3 A60 V140 mOhmsN - Channel20 V3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V8.6 nCEnhancement  
BSC047N08NS3G


MOSFET N Channel 80V 18A 3.5V @ 90uA 4.7mO @ 50A,10V PG-TDSON-8 RoHS
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Infineon Availability : 582000
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USD 0.91
Multiples of: 5000

                   
SI1416EDH-T1-GE3


30V 3.9A 58mO@10V,3.1A 2.8W N Channel SC-70-6(SOT-363) MOSFETs ROHS
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Vishay Availability : 568741
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USD 0.1104
Multiples of: 1

3.9 A30 V58 mOhmsN - Channel12 V1.4 V- 55 C+ 150 C2.8 WSmd/SmtSC - 70 - 6ReelSi1 Channel10 V7.5 nCEnhancement Trenchfet
NDS331N


mosfet n trench 20v 1.3a 1v @ 250ua 160 m @ 1.5a,4.5v ssot-3 rohs
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ON Semiconductor Availability : 564540
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USD 0.1313
Multiples of: 3000

   N Channel               
Hot ZXMN2A01FTA


N-Channel 20 V 1.9A (Ta) 625mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated Availability : 558720
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USD 0.1147
Multiples of: 3000

2.2 A20 V120 mOhmsN - channel 700 mV- 55 C+ 150 C625 mWSmd/smtSOT - 23ReelSi1 Channel4.5 V3 nCEnhancement  
SQS401ENW-T1_GE3


MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
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Vishay Availability : 557373
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USD 0.4264
Multiples of: 1

16 A40 V20 mOhmsP - Channel 2.5 V- 55 C+ 175 C62.5 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel20 V21.2 nCEnhancementAec - Q101Trenchfet
2N7002A-TP


MOSFET N-Ch 60Vds 30Vgs 40Vgsm 115mA 300mW
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Micro Commercial Components (MCC) Availability : 549990
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USD 0.0127
Multiples of: 3000

                   
2N7002


MOSFET N Trench 60V 115mA 2.5V @ 250uA 7.5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Changjiang Availability : 539246
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USD 0.01
Multiples of: 50

                   
BSS84,215


P-Channel 50 V 130mA (Ta) 250mW (Tc) Surface Mount TO-236AB
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Nexperia Availability : 11691
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USD 0.0304
Multiples of: 10

   P - Channel  - 65 C+ 150 C Smd/SmtSOT - 23Reel       
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