About MOSFETs

MOSFETs

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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SISH625DN-T1-GE3


MOSFET -30V Vds; 20V Vgs PowerPAK 1212-8SH
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Vishay Availability : 38467
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USD 0.2346

Multiples of: 1

- 35 A- 30 V7 mOhmsP - Channel - 2.5 V- 55 C+ 150 C52 WSmd/SmtPowerpak1212 - 8Cut TapeSi1 Channel20 V126 nCEnhancement Trenchfet, Powerpak
SH8K32TB1


Mosfet Array 2 N-Channel (Dual) 60V 4.5A 2W Surface Mount 8-SOP (5.0x6.0)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 38408
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USD 0.7877

Multiples of: 1

4.5 A60 V55 mOhmsN - Channel   + 150 C2 WSmd/SmtSOP - 8ReelSi      
BSS138


Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 50V; 0.272A
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Yangjie Availability : 38347
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USD 0.0135

Multiples of: 20

            Trench Power Mv      
SSM3J35CT,L3F


MOSFET Small-signal MOSFET ID=-0.1A VDSS=-20V
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Toshiba Availability : 38050
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USD 0.0525

Multiples of: 1

100 mA20 V4.3 OhmsP - Channel 1 V + 150 C100 mWSmd/SmtSOT - 883 - 3Cut TapeSi1 Channel10 V Enhancement  
BSS209PW H6327


Infineon Technologies MOSFET P-Ch -20V -630mA SOT-323-3
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Infineon Availability : 38018
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USD 0.0426

Multiples of: 1

630 mA20 V550 mOhmsP - Channel 600 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel4.5 V- 1.0 nCEnhancement  
BRCS4435SC


MOSFET P Trench 30V 8.8A 3V @ 250uA 23 mΩ @ 8.8A,10V SOP-8 RoHS
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Blue Rocket Availability : 38014
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USD 0.0544

Multiples of: 5

                   
BSC100N06LS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon Availability : 37864
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USD 0.483

Multiples of: 1

50 A60 V7.8 mOhmsN - Channel 1.2 V- 55 C+ 150 C50 WSmd/SmtTDSONReelSi1 Channel20 V45 nCEnhancement Optimos
SI1926DL-T1-E3


MOSFET 60V 0.37A 0.51W
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Vishay Availability : 37831
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USD 0.1288

Multiples of: 1

370 mA60 V1.4 OhmsN - Channel 1 V- 55 C+ 150 C510 mWSmd/SmtSC - 70 - 6ReelSi2 Channel10 V0.9 nCEnhancement Trenchfet
IRF7341TRPBF


MOSFET 2 N Channel (Dual) 55V 4.7A 1V @ 250uA 50 mΩ @ 4.7A,10V SOIC-8_150mil RoHS
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Infineon Availability : 37690
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USD 0.2224

Multiples of: 1

4.7 A55 V56 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V24 nC   
BSD316SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
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Infineon Availability : 13489
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USD 0.069

Multiples of: 1

            Optimos 2      
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