About RF Bipolar Transistors

RF Bipolar Transistors

RF bipolar transistors are electronic components used in high frequency applications, typically ranging from hundreds of megahertz up to several gigahertz. They are a type of bipolar junction transistor (BJT) that are specifically designed for use in radio frequency (RF) circuits. Unlike traditional BJTs, RF bipolar transistors are optimized to provide a low noise, high gain, and high frequency response. They are also able to handle greater power levels, making them suitable for use in RF power amplifiers.The construction of an RF bipolar transistor involves a heavily doped N-type or P-type semiconductor material sandwiched between two lightly doped layers. This creates two P-N junctions, allowing for the control of current flow through the transistor by varying the voltage applied to the base terminal. RF bipolar transistors are commonly used in various wireless communication systems, such as mobile phones, satellite communication, and radar systems. They are also utilized in RF switches, oscillators, and mixers.Overall, RF bipolar transistors are essential components in the world of electronics, enabling the transmission and reception of high frequency signals for various applications.

RF Bipolar Transistors

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(Ex. GST)(▲▼)		Enter Qty SeriesTransistor TypeTechnologyTransistor PolarityOperating FrequencyDC Collector/Base Gain hFE MinCollector- Emitter Voltage VCEO MaxEmitter- Base Voltage VEBOContinuous Collector CurrentPd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureMounting StylePackage / CasePackagingConfigurationQualification
  
                     
BFU520YX


NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
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NXP Availability : 61097
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USD 0.4232

Multiples of: 1

Npi Part Build_Rf TransistorsBipolar WidebandSiNpn900 MHz6016 V2 V5 mA450 mW- 40 C+ 150 CSmd/SmtSOT363 - 6ReelDual 
BFU530WF


RF Bipolar Transistors NPN wideband silicon RF transistor
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NXP Availability : 5879
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USD 0.1188

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  Si           Cut Tape  
BFS20W,115


Transistors RF Bipolar TRANS HV TAPE-7
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Nexperia Availability : 5837
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USD 0.0486

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 BipolarSiNpn470 MHz 20 V4 V0.025 A200 mW- 65 C+ 150 CSmd/SmtSOT - 323ReelSingle 
BFR 360F H6327


Transistors RF Bipolar RF BIP TRANSISTOR
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Infineon Availability : 5815
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USD 0.077

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Bfr360BipolarSiNpn3.5 GHz 6 V2 V35 mA210 mW- 55 C+ 150 CSmd/SmtTSFP - 3ReelSingle 
BFR 193F H6327


Trans GP BJT NPN 12V 0.08A 3-Pin TSFP T/R
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Infineon Availability : 5801
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USD 0.0985

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Bfr193BipolarSi           Reel  
2SC2714-O(TE85L,F)


Transistors RF Bipolar RF Device FM band 30V Amp 23dB 100mW
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Toshiba Availability : 5785
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USD 0.0975

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2Sc2714BipolarSiliconNpn550 MHz (typ)4030 V4 V20 mA100 mW- 55 C+ 125 CSmd/SmtSC - 59 - 3ReelSingle 
BFR35APE6327HTSA1


RF Bipolar Transistors NPN Silicon RF TRANSISTOR
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Infineon Availability : 5762
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USD 0.1104

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Bfr35 Si          SOT - 23 - 3Cut Tape  
BFP 193W H6327


Infineon Technologies RF Bipolar Transistors RF BIP TRANSISTOR
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Infineon Availability : 5749
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USD 0.0688

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Bfp193BipolarSi           Reel  
BFU730LXZ


NXP Semiconductors RF Bipolar Transistors SiGe:C MMIC Transistor
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NXP Availability : 5738
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USD 0.1782

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 Bipolar WidebandGan SiNpn53 GHz20510 V1.3 V5 mA160 mW- 65 C+ 150 CSmd/SmtSOT - 883C - 3ReelSingle 
MT3S111(TE85L,F)


RF Bipolar Transistors RF Bipolar Transistor .1A 700mW
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 5701
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USD 0.2541

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Mt3s111BipolarSigeNpn11.5 GHz2006 V0.6 V100 mA700 mW + 150 CSmd/SmtTO - 236 - 3Cut TapeSingle 
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