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SiC MOSFETs

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(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NTBG020N120SC1


SiC MOSFETs SIC MOS 20MW 1200V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 38.2145
Multiples of: 800

SMD/SMT N - Channel1 Channel1.2 kV98 A28 mOhms- 15 V , + 25 V4.3 V220 nC- 55 C+ 175 C468 WEnhancement EliteSiC
NVHL020N120SC1


SiC MOSFETs 20MW 1200V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 40.4616
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV103 A28 mOhms- 15 V , + 25 V4.3 V203 nC- 55 C+ 175 C535 WEnhancementAEC - Q101EliteSiC
NVH4L020N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 88.0986
Multiples of: 450

Through Hole N - Channel1 Channel1.2 kV102 A28 mOhms- 15 V , + 25 V4.3 V220 nC- 55 C+ 175 C510 WEnhancement EliteSiC
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