About SiC MOSFETs

On Semiconductor SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NTH4L095N065SC1


SiC MOSFETs SIC MOS TO247-4L 650V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 4.7955

Multiples of: 1

Through Hole N - Channel1 Channel650 V31 A105 mOhms- 8 V , + 22 V4.3 V50 nC- 55 C+ 175 C129 WEnhancement  
NTBG023N065M3S


SiC MOSFETs SIC MOS D2PAK-7L 23MOHM 650V M3S
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USD 6.996

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SMD/SMT N - Channel1 Channel650 V40 A33 mOhms- 8 V , + 22 V4 V69 nC- 55 C+ 175 C263 WEnhancement  
NTHL160N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 8.2949

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV17 A224 mOhms- 15 V , + 25 V4.3 V34 nC- 55 C+ 175 C119 WEnhancement EliteSiC
NTHL023N065M3S


SiC MOSFETs SIC MOS TO247-3L 23MOHM 650V M3S
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 8.544

Multiples of: 1

Through Hole N - Channel1 Channel650 V40 A18 mOhms- 8 V , + 22 V4 V262 nC- 55 C+ 175 C263 WEnhancement  
NTH4L023N065M3S


SiC MOSFETs SIC MOS TO247-4L 23MOHM 650V M3S
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 8.724

Multiples of: 1

Through Hole N - Channel1 Channel650 V40 A33 mOhms- 8 V , + 22 V4 V69 nC- 55 C+ 175 C245 WEnhancement  
NTHL060N090SC1


SiC MOSFETs 60MOHM 900V
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USD 8.9326

Multiples of: 1

Through Hole N - Channel1 Channel900 V46 A84 mOhms- 8 V , + 22 V4.3 V87 nC- 55 C+ 175 C221 WEnhancement EliteSiC
NTBG080N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 9.8905

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV30 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C179 WEnhancement EliteSiC
NTHL080N120SC1A


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 10.9088

Multiples of: 30

Through Hole N - Channel1 Channel1.2 kV31 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C178 WEnhancement EliteSiC
NTH4L018N075SC1


SiC MOSFETs SIC MOS TO247-4L 750V
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USD 17.208

Multiples of: 1

Through Hole N - Channel1 Channel750 V99 A18 mOhms- 8 V , + 22 V4.3 V262 nC- 55 C+ 175 C500 WEnhancement  
NVBG060N090SC1


SiC MOSFETs 60MOHM
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USD 18.87

Multiples of: 1

SMD/SMT N - Channel1 Channel900 V44 A84 mOhms- 8 V , + 22 V4.3 V88 nC- 55 C+ 175 C211 WEnhancementAEC - Q101EliteSiC
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