About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
G3R30MT12J-TR


SiC MOSFETs 1200V 30mohm TO-263-7 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 615
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USD 21.5843

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV85 A34 mOhms- 15 V , + 15 V2.7 V118 nC- 55 C+ 175 C408 WEnhancement  
NTBG045N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L
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ON Semiconductor Availability : 600
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USD 14.5725

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V62 A50 mOhms- 8 V , + 22 V4.3 V105 nC- 55 C+ 175 C121 WEnhancement EliteSiC
C3M0060065K


SiC MOSFETs SiC, MOSFET, 60 mohm, 650V, TO-247-4, Industrial
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Wolfspeed Availability : 599
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USD 11.5694

Multiples of: 1

Through Hole N - Channel1 Channel650 V37 A60 mOhms- 4 V , + 15 V3.6 V46 nC- 40 C+ 175 C150 WEnhancement  
SCT4062KRC15


SiC MOSFETs TO247 1.2KV 26A N-CH SIC
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ROHM Availability : 595
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USD 12.9134

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV26 A62 mOhms- 4 V , + 21 V4.8 V64 nC + 175 C115 WEnhancement  
NTH4L160N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 591
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USD 5.1209

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV17.3 A224 mOhms- 15 V , + 25 V4.3 V34 nC- 55 C+ 175 C111 WEnhancement EliteSiC
SCT2450KEGC11


SiC MOSFETs 1200V, 10A, THD, Silicon-carbide (SiC) MOSFET
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ROHM Availability : 590
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USD 7.4092

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV10 A585 mOhms- 6 V , + 22 V4 V27 nC + 175 C85 WEnhancement  
DIW120SIC023-AQ


SiC MOSFETs
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Diotec Availability : 572
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USD 255.9773

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV125 A23 mOhms- 4 V , + 18 V2.9 V121 nC- 55 C+ 175 C600 WEnhancement  
IMBG120R060M1HXTMA1


SiC MOSFETs Y
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Infineon Availability : 568
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USD 6.9701

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV36 A83 mOhms- 7 V , + 23 V5.7 V34 nC- 55 C+ 175 C181 WEnhancement CoolSiC
SCT027W65G3-4AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
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STMicroelectronics Availability : 562
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USD 12.5888

Multiples of: 1

Through Hole N - Channel1 Channel650 V60 A29 mOhms- 18 V , + 18 V4.2 V51 nC- 55 C+ 200 C313 WEnhancement  
SCT3080KRC15


SiC MOSFETs 1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
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ROHM Availability : 560
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USD 10.6499

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV31 A80 mOhms- 4 V , + 22 V5.6 V60 nC + 175 C165 WEnhancement  
NTH4L040N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L
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ON Semiconductor Availability : 558
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USD 9.6609

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV51 A52 mOhms- 10 V , + 22 V4.4 V70 nC- 55 C+ 175 C329 WEnhancement EliteSiC
SCT4013DRC15


SiC MOSFETs TO247 750V 105A N-CH SIC
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ROHM Availability : 555
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USD 47.4978

Multiples of: 1

Through Hole N - Channel1 Channel750 V105 A13 mOhms- 4 V , + 21 V4.8 V170 nC + 175 C312 WEnhancement  
C3M0040120J2-TR


SiC MOSFETs SiC, MOSFET, 40mohm, 1200V, TO-263-7 XL T&R, Industrial
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed Availability : 554
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USD 10.7118

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV64 A60 mOhms- 8 V , + 19 V2.7 V94 nC- 40 C+ 175 C272 WEnhancement  
SCT040W120G3-4AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
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STMicroelectronics Availability : 552
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USD 12.7429

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV40 A54 mOhms- 18 V , + 18 V4.2 V56 nC- 55 C+ 200 C312 WEnhancement  
C3M0120065K


SiC MOSFETs SiC, MOSFET, 120mohm, 650V, TO-247-4, Industrial
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed Availability : 551
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USD 6.0486

Multiples of: 1

Through Hole N - Channel1 Channel650 V22 A120 mOhms- 4 V , + 15 V3.6 V28 nC- 40 C+ 175 C98 WEnhancement  
SCT3040KLHRC11


SiC MOSFETs 1200V 55A 262W SIC 40mOhm TO-247N
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ROHM Availability : 548
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USD 47.8444

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV55 A40 mOhms- 4 V , + 22 V2.7 V107 nC- 55 C+ 175 C262 WEnhancementAEC - Q101 
NTHL040N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 536
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USD 6.1877

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV51 A52 mOhms- 10 V , + 22 V4.4 V70 nC- 55 C+ 175 C329 WEnhancement EliteSiC
AIMBG120R080M1XTMA1


SiC MOSFETs Y
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Infineon Availability : 535
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USD 7.7926

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV27 A80 mOhms- 20 V , + 20 V4.5 V - 55 C+ 175 C714 WEnhancement CoolSiC
G3R20MT12N


SiC MOSFETs 1200V 20mohm SOT-227 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor Availability : 535
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USD 53.4134

Multiples of: 1

Screw Mount N - Channel1 Channel1.2 kV93 A20 mOhms- 5 V , + 15 V2.7 V180 nC- 55 C+ 175 C338 WEnhancement  
SCT4036KRHRC15


SiC MOSFETs TO247 1.2KV 43A N-CH SIC
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ROHM Availability : 533
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USD 13.5252

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV43 A36 mOhms- 4 V , + 21 V4.8 V91 nC + 175 C176 WEnhancement  
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