X-On Electronics has gained recognition as a prominent supplier of AS4C128M16D3-12BIN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C128M16D3-12BIN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C128M16D3-12BIN Alliance Memory

AS4C128M16D3-12BIN electronic component of Alliance Memory
AS4C128M16D3-12BIN Alliance Memory
AS4C128M16D3-12BIN DRAM
AS4C128M16D3-12BIN  Semiconductors

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Part No. AS4C128M16D3-12BIN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 2G, 1.5V, 1600Mhz 128M x 16 DDR3
Datasheet: AS4C128M16D3-12BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 6.4426 ea
Line Total: USD 32.21 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 5
Multiples : 1
5 : USD 6.4426
10 : USD 6.2643
60 : USD 6.0862
125 : USD 5.8531

   
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Product Category
RoHS - XON
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We are delighted to provide the AS4C128M16D3-12BIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C128M16D3-12BIN and other electronic components in the DRAM category and beyond.

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AS4C128M16D3 REVISION HISTORY AS4C128M16D3 96-ball FBGA PACKAGE Revision Description Issue Date Rev. 1.0 Initial Issue February 2014 Rev. 2.0 Typing error in Table 2 page 2 incorrect temperature range June 2014 amended to: - Commercial (Extended) (0 ~ 95C) - Industrial (-40 ~ 95C) Rev 3.0 Updated Table 11. Recommended DC Operating Conditions page 21 August 2014 Added CL=5 & CL=6 to Table 18 page 26 Confidential 1 Rev. 3.0 Aug. /2014 AS4C128M16D3 2Gb (128M x 16 bit) DDR3 Synchronous DRAM (SDRAM) Confidential Advanced (Rev. 3.0, Aug. /2014) Overview Features JEDEC Standard Compliant The 2Gb Double-Data-Rate-3 DRAMs is double data rate architecture to achieve high-speed operation. It is Power supplies: V & V = +1.5V 0.075V DD DDQ internally configured as an eight bank DRAM. Operating temperature: The 2Gb chip is organized as 16Mbit x 16 I/Os x 8 - Commercial (0 ~ 95C) bank devices. These synchronous devices achieve high - Industrial (-40 ~ 95C) speed double-data-rate transfer rates of up to 1600 Supports JEDEC clock jitter specification Mb/sec/pin for general applications. Fully synchronous operation The chip is designed to comply with all key DDR3 Fast clock rate: 800MHz DRAM key features and all of the control and address Differential Clock, CK & CK# inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the Bidirectional differential data strobe cross point of differential clocks (CK rising and CK# - DQS & DQS# falling). All I/Os are synchronized with differential DQS 8 internal banks for concurrent operation pair in a source synchronous fashion. 8n-bit prefetch architecture These devices operate with a single 1.5V 0.075V Internal pipeline architecture power supply and are available in BGA packages. Precharge & active power down Programmable Mode & Extended Mode registers Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control 8192 refresh cycles / 64ms - Average refresh period 7.8s @ -40 TC +85 3.9s @ +85 TC +95 Write Leveling OCD Calibration Dynamic ODT (Rtt_Nom & Rtt_WR) RoHS compliant Auto Refresh and Self Refresh 96-ball 9 x 13 x 1.2mm FBGA package - All parts are ROHS Compliant Table 1. Speed Grade Information Speed Grade Clock Frequency CAS Latency t (ns) t (ns) RCD RP DDR3-1600 800 MHz 11 13.75 13.75 Table 2 Ordering Information for ROHS Compliant Products Product part No Org Temperature Package AS4C128M16D3-12BCN 128M x 16 Commercial(Extended) 96-ball 0C to 95C FBGA AS4C128M16D3-12BIN 128M x 16 Industrial 96-ball -40C to 95C FBGA Confidential 2 Rev. 3.0 Aug. /2014

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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