X-On Electronics has gained recognition as a prominent supplier of AS4C128M16D3B-12BCN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C128M16D3B-12BCN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C128M16D3B-12BCN Alliance Memory

AS4C128M16D3B-12BCN electronic component of Alliance Memory
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Part No.AS4C128M16D3B-12BCN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 2G 1.5V 800MHz 128M x 16 DDR3
Datasheet: AS4C128M16D3B-12BCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 7
Multiples : 7
7 : USD 3.4814
15 : USD 3.3421
40 : USD 3.3421
125 : USD 3.3421
300 : USD 3.3421
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 8.1786
10 : USD 7.32
25 : USD 7.1696
50 : USD 7.1395
100 : USD 6.5178
209 : USD 6.3774
418 : USD 6.0566
1045 : USD 5.9462
2090 : USD 5.7557
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the AS4C128M16D3B-12BCN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C128M16D3B-12BCN and other electronic components in the DRAM category and beyond.

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AS4C128M16D3B-12BCN Revision History 2Gb AS4C128M16D3B-12BCN - 96 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet Mar. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/41 - Rev.1.0 Mar. 2016AS4C128M16D3B-12BCN Specifications Features - Density : 2G bits - Double-data-rate architecture two data transfers per clock cycle - Organization : - The high-speed data transfer is realized by the 8 bits prefetch pipe- lined architecture - 16M words x 16 bits x 8 banks - Bi-directional differential data strobe (DQS and DQS) is transmitted/ - Package : received with data for capturing data at the receiver - 96-ball FBGA - Lead-free (RoHS - DQS is edge-aligned with data for READs center-aligned with data compliant) and Halogen-free for WRITEs - Power supply : VDD, VDDQ = 1.5V 0.075V - Differential clock inputs (CK and CK) - Data rate : 1600Mbps - DLL aligns DQ and DQS transitions with CK transitions - 1KB page size for X8 / 2KB page size - Commands entered on each positive CK edge data and data mask referenced to both edges of DQS - Row address: A0 to A13 - Data mask (DM) for write data - Column address: A0 to A9 - Posted CAS by programmable additive latency for better command and data bus efficiency - Eight internal banks for concurrent operation - On-Die Termination (ODT) for better signal quality - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) - Synchronous ODT - Burst type (BT) : - Dynamic ODT - Sequential (8, 4 with BC) - Asynchronous ODT - Interleave (8, 4 with BC) - Multi Purpose Register (MPR) for pre-defined pattern read out - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11 - ZQ calibration for DQ drive and ODT - CAS Write Latency (CWL) : 5, 6, 7, 8 - RESET pin for Power-up sequence and reset function - Precharge : auto precharge option for each burst access - SRT range : Normal/extended - Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) - Programmable Output driver impedance control - Refresh : auto-refresh, self-refresh - Refresh cycles : - Average refresh period 7.8 s at 0C Tc +85C 3.9 s at +85C < Tc +95C - Operating case temperature range - Comercial Tc = 0C to +95C Table 1. Ordering Information Part Number Org Temperature MaxClock (MHz) Package Commercial (Extended) AS4C128M16D3B-12BCN 128Mx16 800 96-ball FBGA 0C to 95C Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency tRCD (ns) tRP (ns) DDR3-1600 800MHz 1 1 1 3.75 1 3.75 Confidential - 2/41 - Rev.1.0 Mar. 2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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