X-On Electronics has gained recognition as a prominent supplier of AS4C128M16D3LA-12BIN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C128M16D3LA-12BIN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C128M16D3LA-12BIN Alliance Memory

AS4C128M16D3LA-12BIN electronic component of Alliance Memory
AS4C128M16D3LA-12BIN Alliance Memory
AS4C128M16D3LA-12BIN DRAM
AS4C128M16D3LA-12BIN  Semiconductors

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Part No. AS4C128M16D3LA-12BIN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 2G 1.35V 800MHz 128M x 16 DDR3
Datasheet: AS4C128M16D3LA-12BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 7.8507
10 : USD 7.22
25 : USD 7.0723
50 : USD 7.0522
100 : USD 6.3832
250 : USD 6.3832
500 : USD 6.1849
1000 : USD 6.0799
2000 : USD 5.8698
N/A

Obsolete
   
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We are delighted to provide the AS4C128M16D3LA-12BIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C128M16D3LA-12BIN and other electronic components in the DRAM category and beyond.

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AS4C128M16D3LA-12BIN Revision History 2Gb AS4C128M16D3LA-12BIN - 96 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet May. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential -183- Rev. 1.0 May 2016AS4C128M16D3LA-12BIN 128M x 16 bit DDR3L Synchronous DRAM (SDRAM) Features Overview JEDEC Standard Compliant The 2Gb Double-Data-Rate-3 (DDR3L) DRAMs is double data rate architecture to achieve high-speed Power supplies: V & V = 1.35V DD DDQ operation. It is internally configured as an eight bank Backward compatible to V & V = 1.5V 0.075V DD DDQ DRAM. Industrial temperature: TC = -40~95 C The 2Gb chip is organized as 16Mbit x 16 I/Os x 8 Supports JEDEC clock jitter specification bank devices. These synchronous devices achieve Fully synchronous operation high speed double-data-rate transfer rates of up to Fast clock rate: 800MHz 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3L Differential Clock, CK & CK DRAM key features and all of the control and address Bidirectional differential data strobe inputs are synchronized with a pair of externally supplied - DQS & DQS differential clocks. Inputs are latched at the cross point 8 internal banks for concurrent operation of differential clocks (CK rising and CK falling). All 8n-bit prefetch architecture I/Os are synchronized with differential DQS pair in a Pipelined internal architecture source synchronous fashion. Precharge & active power down These devices operate with a single 1.35V -0.067V /+0.1V power supply and are available in FBGA packages. Programmable Mode & Extended Mode registers Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control 8192 refresh cycles / 64ms - Average refresh period 7.8s -40 C TC +85 C 3.9s +85 C TC +95 C Write Leveling ZQ Calibration Dynamic ODT (Rtt Nom & Rtt WR) RoHS compliant Auto Refresh and Self Refresh 96-ball 8 x 13 x 1.0mm FBGA package - Pb and Halogen Free Table 1. Ordering Information Temperature Max Clock (MHz) Product part No Org Package 800 96-ball FBGA AS4C128M16D3 LA-12BIN 128M x 16 Industrial -40C to 95C Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency t (ns) t (ns) RCD RP 13.75 13.75 800 MHz 11 DDR3L-1600 Confidential -283- Rev. 1.0 May 2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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