X-On Electronics has gained recognition as a prominent supplier of AS4C128M16MD2-25BCN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C128M16MD2-25BCN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C128M16MD2-25BCN Alliance Memory

AS4C128M16MD2-25BCN electronic component of Alliance Memory
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See Product Specifications
Part No.AS4C128M16MD2-25BCN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 2G 1.2V/1.8V 400MHz 128Mx16 Mobile DDR2
Datasheet: AS4C128M16MD2-25BCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 6.2487
10 : USD 5.7739
100 : USD 5.1803
256 : USD 5.1587
512 : USD 4.9213
1024 : USD 4.7054
2560 : USD 4.5651
5120 : USD 4.5004
10112 : USD 4.3817
N/A

Obsolete
   
Manufacturer
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RoHS - XON
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We are delighted to provide the AS4C128M16MD2-25BCN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C128M16MD2-25BCN and other electronic components in the DRAM category and beyond.

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AS4C64M32MD2-25BCN AS4C128M16MD2-25BCN Revision History AS4C64M32MD2-25BCN / AS4C128M16MD2-25BCN 134 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet July. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/129 - Rev.1.0 July 2016AS4C64M32MD2-25BCN AS4C128M16MD2-25BCN KEY FEATURE Double-data rate architecture two data transfers per clock cycle Bidirectional data strobes (DQS, DQS ), These are transmitted/received with data to be used in capturing data at the receiver Differential clock inputs (CK and CK ) Differential data strobes (DQS and DQS ) Commands & addresses entered on both positive and negative CK edges data and data mask referenced to both edges of DQS 8 internal banks for concurrent operation Data mask (DM) for write data Burst Length: 4 (default), 8 or 16 Burst Type: Sequential or Interleave Read & Write latency : Refer to Table 51 LPDDR2 AC Timing Table Auto Precharge option for each burst access Configurable Drive Strength Auto Refresh and Self Refresh Modes Partial Array Self Refresh and Temperature Compensated Self Refresh Deep Power Down Mode HSUL 12 compatible inputs VDD1/VDD2/VDDQ/VDDCA : 1.8V/1.2V/1.2V/1.2V No DLL : CK to DQS is not synchronized Edge aligned data output, center aligned data input Operating Temperature : -30 to 85 C Auto refresh duty cycle : 3.9us Package type : 134-ball FBGA 10x11.5x1.0mm (max) Table 1. Ordering Information Part Number Org Temperature MaxClock (MHz) Package AS4C128M16MD2-25BCN 128Mx16 400 134-ball FBGA Commercial -30C to + 85C 64Mx32 AS4C64M32MD2-25BCN 134-ball FBGA 400 Commercial -30C to + 85C Table 2. Speed Grade Information Speed Grade Clock Frequency tRCD (ns) tRP (ns) RL WL DDR2L-800 18 18 6 400MHz 3 Confidential - 2/129 - Rev.1.0 July 2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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