X-On Electronics has gained recognition as a prominent supplier of AS4C128M32MD2A-25BIN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C128M32MD2A-25BIN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C128M32MD2A-25BIN Alliance Memory

AS4C128M32MD2A-25BIN electronic component of Alliance Memory
AS4C128M32MD2A-25BIN Alliance Memory
AS4C128M32MD2A-25BIN DRAM
AS4C128M32MD2A-25BIN  Semiconductors

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Part No. AS4C128M32MD2A-25BIN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 4G 1.2V/1.8V 400MHz 128Mx32 Mobile DDR2
Datasheet: AS4C128M32MD2A-25BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 12.749 ea
Line Total: USD 12.75 
Availability - 358
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
358
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 12.749
10 : USD 12.001
25 : USD 11.737
100 : USD 10.56
168 : USD 10.032
504 : USD 9.944
1008 : USD 9.944
2520 : USD 9.889
5040 : USD 9.548

   
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RoHS - XON
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We are delighted to provide the AS4C128M32MD2A-25BIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C128M32MD2A-25BIN and other electronic components in the DRAM category and beyond.

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AS4C128M32MD2A-18BIN AS4C128M32MD2A-25BIN Revision History 4Gb(128M x 32) /RZ 3RZHU DDR2 SDRAM AS4C128 0 32MD2 134ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet Dec. 2017 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 122 - Rev.1.0 Dec. 2017AS4C128M32MD2A-18BIN AS4C128M32MD2A-25BIN DDR2 Sync DRAM Features Functionality Configuration - VDD2 = 1.141.30V - 128 Meg X 32 (16 Meg X 32 X 8 Banks). - VDDCA/VDDQ = 1.141.30V Low Power Features - VDD1 = 1.701.95V - Low voltage power supply. - Interface : HSUL 12 - Auto TCSR (Temperature Compensated Self Refresh). - Data width : x32 - PASR (Partial Array Self Refresh) power-saving mode. - Clock frequency range : max 533MHz - DPD (Deep Power Down) Mode. - Four-bit pre-fetch DDR architecture - DS (Driver Strength) Control. - Eight internal banks for concurrent operation Timing Cycle time - Multiplexed, double data rate, command/address inputs - 1.875ns RL = 8 commands entered on every CK edge - 2.5ns RL = 6 - Bidirectional/differential data strobe per byte of - 3.0ns RL = 5 data(DQS/DQS ). Operating Temperature Ranges - DM masks write date at the both rising and falling edge - Industrial -40 to +85. of the data strobe Package - Programmable READ and WRITE latencies (RL/WL) - 134-Ball FBGA(10.0mm x 11.5mm x 1.0mm) - Programmable burst lengths: 4, 8, or 16 - Auto refresh and self refresh supported - All bank auto refresh and per bank auto refresh supported - Clock stop capability Table I. Ordering Information Product part No. Org Temperature Max Clock (MHz) Package AS4C128M32MD2A-18BIN 128M x 32 Industrial -40C to 85C 533 134-ball FBGA AS4C128M32MD2A-25BIN 128M x 32 Industrial -40C to 85C 400 134-ball FBGA Table II. Speed Grade Information WL Speed Grade Clock Frequency RL tRCD (ns) tRP (ns) DDR2L-800 3 18 18 400MHz 6 4 DDR2L-1066 533MHz 18 18 8 Confidential - 2 of 122 - Rev.1.0 Dec. 2017

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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