X-On Electronics has gained recognition as a prominent supplier of AS4C128M32MD4-062BAN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C128M32MD4-062BAN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C128M32MD4-062BAN Alliance Memory

AS4C128M32MD4-062BAN electronic component of Alliance Memory
AS4C128M32MD4-062BAN Alliance Memory
AS4C128M32MD4-062BAN DRAM
AS4C128M32MD4-062BAN  Semiconductors

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Part No. AS4C128M32MD4-062BAN
Manufacturer: Alliance Memory
Category: DRAM
Description: SDRAM - Mobile LPDDR4 Memory IC 4Gb (128M x 32) LVSTL 1.6GHz 3.5ns 200-FBGA (10x14.5)
Datasheet: AS4C128M32MD4-062BAN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 21.428 ea
Line Total: USD 21.43 
Availability - 307
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
307
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 21.428
10 : USD 19.338
25 : USD 18.194
50 : USD 17.952
100 : USD 17.71
272 : USD 16.841
544 : USD 16.159
1088 : USD 16.159
2584 : USD 16.159

   
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We are delighted to provide the AS4C128M32MD4-062BAN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C128M32MD4-062BAN and other electronic components in the DRAM category and beyond.

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2Gb/4Gb/8Gb LPDDR4 Revision History For 2Gb/4Gb/8Gb LPDDR4 200ball FBGA Package Revision Details Date Rev 1.0 Initial Release Aug 2020 Confidential - 1 of 64 - Rev. 1.0 Aug. 2020 2Gb/4Gb/8Gb LPDDR4 1 Overview The LPDDR4 SDRAM is organized as 1 or 2 channels per device, and individual channel is 8-banks and 16-bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth. 1.1 Features The 2Gb/4Gb/8Gb LPDDR4 SDRAM offers the Bidirectional/differential data strobe per byte of data following key features: (DQS, DQS) Configuration: DMI pin support for write data masking and DBI - x32 for 2-channels per device (AS4C64M32MD4 , functionality AS4C128M32MD4, AS4C256M32MD4) Programmable READ and WRITE latencies (RL/WL) - x16 for 1-channel per device Programmable and on-the-fly burst lengths (BL =16, (AS4C128M16MD4, AS4C256M16MD4) 32) - 8 internal banks per each channel Support non-targert DRAM ODT control On-Chip ECC: Directed per-bank refresh for concurrent bank - Single-bit error correction (per 64-bits), which will operation and ease of command scheduling maximize reliability ZQ Calibration - Optional ERR output signal per channel, which Operation Temperature: indicates ECC event occurrence C - ECC Register, which controls ECC function - Automotive A2 (TC = -40C to 105 Low-voltage Core and I/O Power Supplies: On-chip temperature sensor to control self refresh rate - VDD2 /VDDQ = 1.06-1.17V, VDD1 = 1.70-1.95V On-chip temperature sensor whose status can be LVSTL(Low Voltage Swing Terminated Logic) I/O read from MR4 Interface RoHS-compliant, green packaging Internal VREF and VREF Training Package: Dynamic ODT : 2Gb/4Gb : 200 ball FBGA (10mm x 14.5mm x 0.8mm) - DQ ODT :VSSQ Termination 8Gb : 200 ball FBGA (10mm x 14.5mm x 1.1mm) - CA ODT :VSS Termination Selectable output drive strength (DS) Max. Clock Frequency : 1.6GHz (3.2Gbps for one channel) 16-bit Pre-fetch DDR data bus Single data rate (multiple cycles) command/address bus Table 1. Speed Grade Information Speed Grade Clock Frequency RL t CK (ns) DDR4L-3200 1600MHz 28 0 .625 *Other clock frequencies/data rates supported please refer to AC timing tables Confidential - 2 of 64 - Rev. 1.0 Aug. 2020

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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