X-On Electronics has gained recognition as a prominent supplier of AS4C128M8D3B-12BCN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C128M8D3B-12BCN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C128M8D3B-12BCN Alliance Memory

AS4C128M8D3B-12BCN electronic component of Alliance Memory
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Part No.AS4C128M8D3B-12BCN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM Chip DDR3 SDRAM 1Gbit 128M X 8 78-Pin FBGA Tray
Datasheet: AS4C128M8D3B-12BCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.565 ea
Line Total: USD 4.57 
Availability - 315
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
225
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 242
Multiples : 242
242 : USD 5.2

315
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 4.565
10 : USD 4.235
5082 : USD 4.004
10164 : USD 3.993

   
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We are delighted to provide the AS4C128M8D3B-12BCN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C128M8D3B-12BCN and other electronic components in the DRAM category and beyond.

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AS4C128M8D3B-12BIN AS4C128M8D3B-12BCN Revision History 1Gb DDR3 AS4C128M8D3 B 78ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet Jan. 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 85 - Rev.1.0 Jan.2018AS4C128M8D3B-12BIN AS4C128M8D3B-12BCN 128M x 8 bit DDR3 Synchronous DRAM (SDRAM) Advance (Rev. 1.0, Jan /2018) Features Overview JEDEC Standard Compliant The 1Gb Double-Data-Rate-3 DRAMs is double data rate architecture to achieve high-speed operation. It is Power supplies: V & V = +1.5V 0.075V DD DDQ internally configured as an eight bank DRAM. Operating temperature range: The 1Gb chip is organized as 16Mbit x 8 I/Os x 8 bank : T = 0~95 C - Commercial C devices. These synchronous devices achieve high : T = -40~95 C - Industrial C speed double-data-rate transfer rates of up to 1600 Mb/ Supports JEDEC clock jitter specification sec/pin for general applications. Fully synchronous operation The chip is designed to comply with all key DDR3 DRAM Fast clock rate: 800MHz key features and all of the control and address inputs are synchronized with a pair of externally supplied differential Differential Clock, CK & CK clocks. Inputs are latched at the cross point of differential Bidirectional differential data strobe clocks (CK rising and CK falling). All I/Os are synchronized - DQS & DQS with differential DQS pair in a source synchronous fashion. 8 internal banks for concurrent operation These devices operate with a single 1.5V 0.075V power 8n-bit prefetch architecture supply and are available in BGA packages. Pipelined internal architecture Precharge & active power down Programmable Mode & Extended Mode registers Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control Average refresh period - 8192 cycles/64ms (7.8us at -40C T +85C) C - 8192 cycles/32ms (3.9us at +85C T +95C) C Write Leveling ZQ Calibration Dynamic ODT (Rtt Nom & Rtt WR) RoHS compliant Auto Refresh and Self Refresh 78-ball 8 x 10.5 x 1.0mm FBGA package - Pb and Halogen Free Table 1. Ordering Information Temperature Org Max Clock (MHz) Product part No Package 800 128M x 8 Commercial 0C to 95C 78-ball FBGA AS4C128M8D3B-12BCN 800 128M x 8 Industrial -40C to 95C 78-ball FBGA AS4C128M8D3B-12BIN Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency t t (ns) (ns) RCD RP 800 MHz 11 13.75 13.75 DDR3-1600 Confidential - 2 of 85 - Rev.1.0 Jan.2018

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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