AS4C16M16D1 16M x 16 bit DDR Synchronous DRAM (SDRAM) Alliance Memory Confidential Advanced (Rev. 1.1, Sep. /2011) Overview Features The AS4C16M16D1 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 256 Mbits. Fast clock rate: 200MHz It is internally configured as a quad 4M x 16 DRAM with a Differential Clock CK & CK synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur Bi-directional DQS CK DLL enable/disable by EMRS at both rising edges of CK and .d Read and write accesses to the SDRAM are burst oriented accesses start Fully synchronous operation at a selected location and continue for a programmed Internal pipeline architecture number of locations in a programmed sequence. Accesses Four internal banks, 4M x 16-bit for each bank begin with the registration of a BankActivate command Programmable Mode and Extended Mode registers which is then followed by a Read or Write command. The AS4C16M16D1 provides programmable Read or Write - CAS Latency: 2, 2.5, 3 burst lengths of 2, 4, or 8. An auto precharge function may - Burst length: 2, 4, 8 be enabled to provide a self-timed row precharge that is - Burst Type: Sequential & Interleaved initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. In Individual byte-write mask control addition, AS4C16M16D1 features programmable DLL DM Write Latency = 0 option. By having a programmable mode register and Auto Refresh and Self Refresh extended mode register, the system can choose the most 8192 refresh cycles / 64ms suitable modes to maximize its performance. These devices are well suited for applications requiring high Operating temperature range memory band-width, result in a device particularly well - Commercial (0 ~ 70C) suited to high performance main memory and graphics - Industrial (-40 ~ 85C) applications. Precharge & active power down Power supplies: VDD & VDDQ = 2.5V 0.2V Interface: SSTL 2 I/O Interface Package: 66 Pin TSOP II, 0.65mm pin pitch - Pb free and Halogen free Package: 60-Ball, 8x13x1.2 mm (max) TFBGA - Pb free and Halogen Free Table 1.Ordering Information Part Number Clock Data Rate Package Temperature Temp Range AS4C16M16D1-5TCN 200MHz 400Mbps/pin 66pin TSOPII Commercial 0 ~ 70C Industrial -40 ~ 85C AS4C16M16D1-5TIN 200MHz 400Mbps/pin 66pin TSOPII AS4C16M16D1-5BCN 200MHz 400Mbps/pin 60ball TFBGA Commercial 0 ~ 70C Industrial -40 ~ 85C AS4C16M16D1-5BIN 200MHz 400Mbps/pin 60ball TFBGA T: indicates TSOP II package B: indicates TFBGA package C: indicates Commercial temp. I: indicates Industrial temp. N: indicates lead free ROHS Alliance Memory, Inc. 551 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory, Inc. reserves the right to change products or specification without notice. AS4C16M16D1 Figure 1. Pin Assignment (Top View) Figure 1.1 Ball Assignments (Top View) 1 2 3 7 8 9 VDD 1 66 VSS VSSQ DQ15 VSS VDD DQ0 VDDQ A DQ0 2 65 DQ15 VDDQ 3 64 VSSQ B DQ14 VDDQ DQ13 DQ2 VSSQ DQ1 DQ1 4 63 DQ14 C DQ12 VSSQ DQ11 DQ4 VDDQ DQ3 DQ2 5 62 DQ13 VSSQ 6 61 VDDQ D DQ10 VDDQ DQ9 DQ6 VSSQ DQ5 DQ3 7 60 DQ12 DQ4 8 59 DQ11 DQ8 VSSQ UDQS LDQS VDDQ DQ7 E 9 58 VDDQ VSSQ DQ5 10 57 DQ10 VREF VSS UDM LDM VDD NC F DQ6 11 56 DQ9 VSSQ 12 55 VDDQ G CK CK WE CAS DQ7 13 54 DQ8 H A12 CKE RAS CS NC 14 53 NC VDDQ 15 52 VSSQ A11 A9 BA1 BA0 J LDQS 16 51 UDQS NC 17 50 NC A8 A7 A0 A10 K VDD 18 49 VREF NC 19 48 VSS L A6 A5 A2 A1 LDM 20 47 UDM 21 46 WE CK A4 VSS VDD A3 M CAS 22 45 CK RAS 23 44 CKE CS 24 43 NC NC 25 42 A12 BA0 26 41 A11 BA1 27 40 A9 A10/AP 28 39 A8 A0 29 38 A7 A1 30 37 A6 31 36 A2 A5 A3 32 35 A4 VDD 33 34 VSS Alliance Memory, lnc. Confidential 2 Rev. 1.1 Sep. /2011