X-On Electronics has gained recognition as a prominent supplier of AS4C16M16MD1-6BCNTR DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C16M16MD1-6BCNTR DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C16M16MD1-6BCNTR Alliance Memory

AS4C16M16MD1-6BCNTR electronic component of Alliance Memory
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Part No.AS4C16M16MD1-6BCNTR
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 256M, 1.8V, 166Mhz 16M x 16 Mobile DDR
Datasheet: AS4C16M16MD1-6BCNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 3.4911 ea
Line Total: USD 3491.1 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 3.4911
2000 : USD 3.4573

   
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We are delighted to provide the AS4C16M16MD1-6BCNTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C16M16MD1-6BCNTR and other electronic components in the DRAM category and beyond.

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AS4C16M16MD1 256Mb MOBILE DDR SDRAM TABLE OF CONTENTS 1. GENERAL DESCRIPTION ................................................................................................... 4 2. FEATURES ........................................................................................................................... 4 3. PIN DESCRIPTION............................................................................................................... 5 3.1 Signal Descriptions.......................................................................................................................... 6 4. BLOCK DIAGRAM ............................................................................................................... 8 4.1 Block Diagram .................................................................................................................................8 4.2 Simplified State Diagram ................................................................................................................. 9 5. FUNCTION DESCRIPTION ................................................................................................. 10 5.1 Initialization ....................................................................................................................................11 5.1.1 Initialization Flow Diagram ................................................................................................................. 12 5.2 Register Definition .........................................................................................................................13 5.2.1 Mode Register ............................................................................................................................ 13 5.3 Burst Definition .............................................................................................................................. 13 5.2.1.2 Burst Type ............................................................................................................................... 14 5.2.2 Extended Mode Register ............................................................................................................ 14 5.2.2.1 Partial Array Self Refresh ....................................................................................................... 15 5.2.2.2 Temperature Compensated Self Refresh ............................................................................... 15 5.2.2.3 Output Drive Strength ............................................................................................................. 15 6. COMMANDS .................................................................................................................... 16 7. OPERATION ........................................................................................................................ 21 7.1. Deselect ........................................................................................................................................ 21 7.2. No Operation ................................................................................................................................ 21 7.4. Active ............................................................................................................................................ 22 7.5. Read ............................................................................................................................................. 23 7.5.1 Read to Read ...................................................................................................................................... 25 6.5.11 Burst Terminate ................................................................................................................................. 30 7.6 Write .............................................................................................................................................. 30 7.6.1 Write to Write ..................................................................................................................................... 32 7.7 Precharge ...................................................................................................................................... 36 7.8 Auto Precharge ............................................................................................................................. 37 7.9 Refresh Requirements .................................................................................................................. 37 7.10 Auto Refresh ............................................................................................................................... 37 7.11 Self Referesh ............................................................................................................................... 37 7.12 Power Down ................................................................................................................................ 39 7.13 Deep Power Down ...................................................................................................................... 41 7.14 Clock Stop ................................................................................................................................... 42 8. ELECTRICAL CHARACTERISTIC ......................................................................................43 Confidential - 1/56 - Ver.1.1 Oct.2015AS4C16M16MD1 256Mb MOBILE DDR SDRAM 8.1 Absolute Maximum Ratings .......................................................................................................... 43 8.2 Input/Output Capacitance ............................................................................................................. 43 8.3 Electrical Characteristics and AC/DC Operating Conditions ........................................................ 44 8.3.1 Electrical Characteristics and AC/DC Operating Conditions ............................................................... 44 8.4 IDD Specification Parameters and Test Conditions ..................................................................... 45 8.4.1 IDD Specification Parameters and Test Conditions ............................................................................ 45 8.5 AC Timings .................................................................................................................................... 47 8.5.2 Output Slew Rate Characteristics ....................................................................................................... 51 7.5.3 AC Overshoot/Undershoot Specification ............................................................................................. 51 8.5.4 AC Overshoot and Undershoot Definition ........................................................................................... 52 9. PACKAGE DIMENSION ..................................................................................................... 53 10. ORDERING INFORMATION ............................................................................................. 54 11. REVISION HISTORY ........................................................................................................ 55 Confidential - 2/56 - Ver.1.1 Oct.2015

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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