X-On Electronics has gained recognition as a prominent supplier of AS4C16M16S-7BCN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C16M16S-7BCN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C16M16S-7BCN Alliance Memory

AS4C16M16S-7BCN electronic component of Alliance Memory
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Part No.AS4C16M16S-7BCN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 256Mb, 3.3V, 143Mhz 16M x 16 SDRAM
Datasheet: AS4C16M16S-7BCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 3.501 ea
Line Total: USD 17.5 
Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 5
Multiples : 5
5 : USD 3.501
20 : USD 3.2158
100 : USD 2.9175

   
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RoHS - XON
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We are delighted to provide the AS4C16M16S-7BCN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C16M16S-7BCN and other electronic components in the DRAM category and beyond.

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AS4C16M16S 16M x 16 bit Synchronous DRAM (SDRAM) Confidential Advanced (Rev. 1.4, Feb. /2012) Overview Features he 256Mb SDRAM is a high-speed CMOS T Fast access time from clock: 5.4/5.4 ns synchronous DRAM containing 256 Mbits. It is Fast clock rate: 166/143 MHz internally configured as 4 Banks of 4M word x 16 Fully synchronous operation DRAM with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, 4M word x 16-bit x 4-bank CLK). Read and write accesses to the SDRAM are Programmable Mode registers burst oriented; accesses start at a selected location and continue for a programmed number of locations in - CAS Latency: 2, or 3 a programmed sequence. Accesses begin with the - Burst Length: 1, 2, 4, 8, or full page registration of a BankActivate command which is then - Burst Type: Sequential or Interleaved followed by a Read or Write command. - Burst stop function The SDRAM provides for programmable Read or Auto Refresh and Self Refresh Write burst lengths of 1, 2, 4, 8, or full page, with a 8192 refresh cycles/64ms burst termination option. An auto precharge function CKE power down mode may be enabled to provide a self-timed row precharge Single +3.3V power supply that is initiated at the end of the burst sequence. The Interface: LVTTL refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the Operating temperature range system can choose the most suitable modes to - Commercial (0 ~ 70C) maximize its performance. These devices are well - Industrial (-40 ~ 85C) suited for applications requiring high memory - Automotive (-40 ~ 105C) bandwidth and particularly well suited to high 54-pin 400 mil plastic TSOP II package performance PC applications. 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package All parts fully ROHS Compliant Table 1. Key Specifications AS4C16M16S -6/7 tCK3 Clock Cycle time (min.) 6/7 ns tAC3 Access time from CLK (max.) 5.4/5.4 ns tRAS Row Active time (min.) 42/49 ns tRC Row Cycle time (min.) 60/63 ns Table 2. Ordering Information Part Number Frequency Package AS4C16M16S-7TCN 143 MHz 54 pin TSOP II AS4C16M16S-6TCN 166 MHz 54 pin TSOP II AS4C16M16S-6TIN 166 MHz 54 pin TSOP II AS4C16M16S-6BIN 166 MHz 54 ball TFBGA AS4C16M16S-7BCN 143 MHz 54 ball TFBGA AS4C16M16S-6TAN 166 MHz 54 pin TSOP II T : indicates TSOP II package B : indicates TFBGA package N : indicates Pb free and Halogen free ROHS compliant parts C: Commercial I: Industrial A: Automotive temperatures Confidential 1 Rev 3 Feb. 2014 AS4C16M16S Figure 1.1 Ball Assignment (Top View) Figure 1. Pin Assignment (Top View) VDD 1 54 VSS 1 2 3 7 8 9 DQ0 2 53 DQ15 3 52 VDDQ VSSQ VSS DQ15 VSSQ VDDQ DQ0 VDD A DQ1 4 51 DQ14 DQ2 5 50 DQ13 DQ14 DQ13 VDDQ VSSQ DQ2 DQ1 B VSSQ 6 49 VDDQ DQ3 7 48 DQ12 DQ12 DQ11 VSSQ VDDQ DQ4 DQ3 C 8 47 DQ4 DQ11 VDDQ 9 46 VSSQ DQ10 DQ9 VDDQ VSSQ DQ6 DQ5 D DQ5 10 45 DQ10 DQ6 11 44 DQ9 DQ8 NC VSS VDD LDQM DQ7 E VSSQ 12 43 VDDQ 13 42 DQ7 DQ8 UDQM CLK CKE CAS# RAS# WE# F VDD 14 41 VSS LDQM 15 40 NC A12 A11 A9 BA0 BA1 CS# G WE# 16 39 UDQM CAS# 17 38 CLK A 8 A7 A6 A 0 A1 A10 H RAS# 18 37 CKE CS# 19 36 A12 VSS A5 A4 A3 A2 VDD J BA0 20 35 A11 BA1 21 34 A9 A10/AP 22 33 A8 A0 23 32 A7 A1 24 31 A6 A2 25 30 A5 A3 26 29 A4 VDD 27 28 VSS Confidential 2 Rev. 3 Feb. /2014

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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