X-On Electronics has gained recognition as a prominent supplier of AS4C16M16SA-6BIN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C16M16SA-6BIN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C16M16SA-6BIN Alliance Memory

AS4C16M16SA-6BIN electronic component of Alliance Memory
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Part No.AS4C16M16SA-6BIN
Manufacturer: Alliance Memory
Category: DRAM
Description: Alliance Memory DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
Datasheet: AS4C16M16SA-6BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.698 ea
Line Total: USD 5.7 
Availability - 1804
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
675
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 348
Multiples : 348
348 : USD 4.576

6
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 7.8286
10 : USD 7.6452
30 : USD 7.5229
100 : USD 7.4005

1804
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.698
10 : USD 4.752
100 : USD 4.741
250 : USD 4.73
348 : USD 4.345
1044 : USD 4.29
2784 : USD 4.279
5220 : USD 4.246

   
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We are delighted to provide the AS4C16M16SA-6BIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C16M16SA-6BIN and other electronic components in the DRAM category and beyond.

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AS4C16M16SA-C&I Revision History Revision Details Date Rev 1.0 Preliminary datasheet February 2014 Rev 2.0 Correct some typing mistakes. March 2014 Rev 3.0 1. Add AS4C16M16SA-6TCN part. March 2015 2. Modify ordering information. 3. Add part number system on the last page. Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. Confidential 0 Rev. 3.0 Mar./2015 AS4C16M16SA-C&I 256M (16Mx16bit) Synchronous DRAM (SDRAM) Confidential Advanced(Rev. 3.0, Mar. /2015) Features Overview Fast access time from clock: 5/5.4 ns The 256Mb SDRAM is a high-speed CMOS Fast clock rate: 166/143 MHz synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 Fully synchronous operation DRAM with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, 4M word x 16-bit x 4-bank CLK). Read and write accesses to the SDRAM are Programmable Mode registers burst oriented accesses start at a selected location - CAS Latency: 2 or 3 and continue for a programmed number of locations in - Burst Length: 1, 2, 4, 8, or full page a programmed sequence. Accesses begin with the - Burst Type: Sequential or Interleaved registration of a BankActivate command which is then followed by a Read or Write command. - Burst stop function Operating temperature range The SDRAM provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a - Commercial (0 ~ 70C) burst termination option. An auto precharge function - Industrial (-40 ~ 85C) may be enabled to provide a self-timed row precharge Auto Refresh and Self Refresh that is initiated at the end of the burst sequence. The 8192 refresh cycles/64ms refresh functions, either Auto or Self Refresh are easy CKE power down mode to use. Single +3.3V 0.3V power supply By having a programmable mode register, the system Interface: LVTTL can choose the most suitable modes to maximize its 54-pin 400 mil plastic TSOP II package performance. These devices are well suited for applications requiring high memory bandwidth and 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package particularly well suited to high performance PC - All parts ROHS are compliant applications. Table 1. Key Specifications AS4C16M16SA -6/7 tCK3 Clock Cycle time (min.) 6/7 ns tAC3 Access time from CLK (max.) 5/5.4 ns tRAS Row Active time (min.) 42/42 ns tRC Row Cycle time (min.) 60/63 ns Table 2. Ordering Information Temperature Temp Range Part Number Frequency Package Commercial 0~70 AS4C16M16SA-7TCN 143 MHz 54 pin TSOP II Commercial 0~70 AS4C16M16SA-6TCN 166 MHz 54 pin TSOP II AS4C16M16SA-6TIN 166 MHz 54 pin TSOP II Industrial -40~85 Commercial AS4C16M16SA-7BCN 143 MHz 54 ball TFBGA 0~70 AS4C16M16SA-6BIN 166 MHz 54 ball TFBGA Industrial -40~85 T : indicates TSOP II package B : indicates TFBGA package C: Commercial I: Industrial N : indicates Pb free and Halogen free Confidential 1 Rev. 3.0 Mar. /2015

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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