X-On Electronics has gained recognition as a prominent supplier of AS4C1G8D3LA-10BIN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C1G8D3LA-10BIN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C1G8D3LA-10BIN Alliance Memory

AS4C1G8D3LA-10BIN electronic component of Alliance Memory
AS4C1G8D3LA-10BIN Alliance Memory
AS4C1G8D3LA-10BIN DRAM
AS4C1G8D3LA-10BIN  Semiconductors

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Part No. AS4C1G8D3LA-10BIN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 8G 1Gx8 933MHz 1.35V DDR3 IT
Datasheet: AS4C1G8D3LA-10BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 23.078 ea
Line Total: USD 23.08 
Availability - 706
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Fri. 17 Jan to Wed. 22 Jan
MOQ : 1
Multiples : 1
1 : USD 41.621
10 : USD 37.8229

706
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 23.078
10 : USD 22.869
50 : USD 22.693
220 : USD 22.682

   
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We are delighted to provide the AS4C1G8D3LA-10BIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C1G8D3LA-10BIN and other electronic components in the DRAM category and beyond.

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AS4C1G8D3LA Revision History 8Gbit DDR3L SDRAM 8 BANKS X 128Mbit X 8 - Dual Die Package (DDP) 78ball FBGA Package Revision Details Date Rev 1.0 Preliminary datasheet Feb. 2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Rev.1.0. Feb.2019 Confidential - 1 of 41 -AS4C1G8D3LA Specifications - Density : 8G bits Features - Organization : - Double-data-rate architecture two data transfers per clock cycle - 128M words x 8 bits x 8 banks - The high-speed data transfer is realized by the 8 bits prefetch pipe- - Package : lined architecture - 78-ball FBGA - Bi-directional differential data strobe (DQS and DQS) is transmitted/ - Two 1Gbit x 4 dies stacked (DDP) received with data for capturing data at the receiver - Lead-free (RoHS compliant) and Halogen-free - DQS is edge-aligned with data for READs center-aligned with data - Power supply : VDD, VDDQ = 1.35V (1.283V to 1.45V) for WRITEs - -Backward compatible to VDD, VDDQ = 1.5V 0.075V - Differential clock inputs (CK and CK) - Data rate : 1866Mbps - DLL aligns DQ and DQS transitions with CK transitions - 2KB page size - Commands entered on each positive CK edge data and data mask - Row address: A0 to A15 referenced to both edges of DQS - Column address: A0 to A9, A11 - Data mask (DM) for write data - Eight internal banks for concurrent operation - Posted CAS by programmable additive latency for better command - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) and data bus efficiency - Burst type (BT) : - On-Die Termination (ODT) for better signal quality - Sequential (8, 4 with BC) - Synchronous ODT - Interleave (8, 4 with BC) ODT - Dynamic - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11, 13 - Asynchronous ODT - CAS Write Latency (CWL) : 5, 6, 7, 8 ,9 - Multi Purpose Register (MPR) for pre-defined pattern read out - Precharge : auto precharge option for each burst access - ZQ calibration for DQ drive and ODT - Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) - RESET pin for Power-up sequence and reset function - Refresh : auto-refresh, self-refresh - SRT range : Normal/extended - Refresh cycles : - Programmable Output driver impedance control - Average refresh period 7.8 s at -40C Tc +85C 3.9 s at +85C < Tc +105C - Operating case temperature range - Commerc ial Tc = 0C to +95C - Industrial Tc = -40C to +95C - Automotive Tc = -40C to +105C Table 1. Ordering Information Org Temperature Max Clock (MHz) Product part No Package 933 AS4C1AS4C1G8D3LA-10BCNG8D3LA-10BCN 78-ball FBGA 1G x 8 Commercial 0C to 95C 933 AS4C1G8D3LA-10BIN 1G x 8 Industrial -40C to 95C 78-ball FBGA 933 78-ball FBGA 1G x 8 Automotive -40C to 105C AS4C1G8D3LA-10BAN Table 2. Speed Grade Information CAS Latency tRCD(ns) Speed Grade Clock Frequency tRP(ns) DDR3-1866 933 MHz 13 13.91 13.91 - 2 of 41 - Rev.1.0. Feb.2019

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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