X-On Electronics has gained recognition as a prominent supplier of AS4C256M16D3LA-12BIN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C256M16D3LA-12BIN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C256M16D3LA-12BIN Alliance Memory

AS4C256M16D3LA-12BIN electronic component of Alliance Memory
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Part No.AS4C256M16D3LA-12BIN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 4G 1.35V 800MHz 256M x 16 DDR3
Datasheet: AS4C256M16D3LA-12BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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Multiples : 190
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MOQ : 1
Multiples : 1
1 : USD 12.3303
10 : USD 10.9568
25 : USD 10.8947
50 : USD 10.8325
100 : USD 9.6416
250 : USD 9.3102
500 : USD 9.1548
1000 : USD 8.9063
2000 : USD 8.6888
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 11.8125
2 : USD 7.4804
5 : USD 7.0726
100 : USD 6.983
N/A

Obsolete
   
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We are delighted to provide the AS4C256M16D3LA-12BIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C256M16D3LA-12BIN and other electronic components in the DRAM category and beyond.

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AS4C256M16D3LA-12BIN Revision History 4Gb AS4C256M16D3LA-12BIN - 96 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet May. 2016 Rev 1.1 add CL=5,CWL=5 and CL=6,CWL=5 in table 18 Nov. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential -1/83- Rev. 1.1 Nov. 2016AS4C256M16D3LA-12BIN 256M x 16 bit DDR3L Synchronous DRAM (SDRAM) Overview Features JEDEC Standard Compliant The 4Gb Double-Data-Rate-3 (DDR3L) DRAMs is double data rate architecture to achieve high-speed Power supplies: V & V = +1.35V DD DDQ operation. It is internally configured as an eight bank Backward compatible to V & V = 1.5V 0.075V DD DDQ DRAM. Operating temperature: -40~95 C (TC) The 4Gb chip is organized as 32Mbit x 16 I/Os x 8 Supports JEDEC clock jitter specification bank devices. These synchronous devices achieve Fully synchronous operation high speed double-data-rate transfer rates of up to Fast clock rate: 800 MHz 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3L Differential Clock, CK & CK DRAM key features and all of the control and address Bidirectional differential data strobe inputs are synchronized with a pair of externally - DQS & DQS supplied differential clocks. Inputs are latched at the 8 internal banks for concurrent operation cross point of differential clocks (CK rising and CK 8n-bit prefetch architecture falling). All I/Os are synchronized with differential DQS Pipelined internal architecture pair in a source synchronous fashion. Precharge & active power down These devices operate with a single 1.35V -0.067V Programmable Mode & Extended Mode registers /+0.1V power supply and are available in BGA packages. Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control 8192 refresh cycles / 64ms - Average refresh period 7.8 s -40C TC +85C 3.9 s +85C TC +95C Write Leveling ZQ Calibration Dynamic ODT (Rtt Nom & Rtt WR) RoHS compliant Auto Refresh and Self Refresh 96-ball 9 x 13 x 1.0mm FBGA package - Pb and Halogen Free Table 1. Ordering Information Package Org Temperature Product part No Max Clock (MHz) AS4C 256M16D3 LA-12BIN 256M x 16 800 96-ball FBGA Industrial -40C to 95C Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency t (ns) t (ns) RCD RP 13.75 13.75 800 MHz 11 DDR3 L-1600 Confidential -2/83- Rev. 1.1 Nov. 2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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