X-On Electronics has gained recognition as a prominent supplier of AS4C256M16D3LB-12BINTR DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C256M16D3LB-12BINTR DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C256M16D3LB-12BINTR Alliance Memory

AS4C256M16D3LB-12BINTR electronic component of Alliance Memory
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Part No.AS4C256M16D3LB-12BINTR
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 4G 1.35V 800Mhz 256M x 16 30nm DDR3
Datasheet: AS4C256M16D3LB-12BINTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 9.8081
10 : USD 8.8642
25 : USD 8.6636
50 : USD 8.6135
100 : USD 7.7913
250 : USD 7.4102
500 : USD 7.33
1000 : USD 7.2398
2000 : USD 7.0091
N/A

Obsolete
   
Manufacturer
Product Category
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Category
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We are delighted to provide the AS4C256M16D3LB-12BINTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C256M16D3LB-12BINTR and other electronic components in the DRAM category and beyond.

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AS4C256M16D3LB Revision History 4Gb AS4C256M16D3LB 96 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet Apr. 2016 Rev 1.1 Add Industrial part datasheet Jan. 2017 Rev 1.2 Add 1866Mbps / 933 MHz speed option Feb.2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 54 - Rev.1.2 Feb. 2019AS4C256M16D3LB Specifications Features - Density : 4G bits - Double-data-rate architecture two data transfers per clock cycle - Organization : 32M words x 16 bits x 8 banks - Package : - The high-speed data transfer is realized by the 8 bits - 96-ball FBGA prefetch pipelined architecture - Lead-free (RoHS compliant) and Halogen-free - Bi-directional differential data strobe (DQS and DQS) is - Power supply : VDD, VDDQ = 1.35V (1.283V to 1.45V) transmitted/received with data for capturing data at the re- - Backward compatible to VDD, VDDQ = 1.5V 0.075V ceiver - Data rate : - DQS is edge-aligned with data for READs center-aligned - 1600Mbps with data for WRITEs - 1866Mbps - Differential clock inputs (CK and CK) - 2KB page size - DLL aligns DQ and DQS transitions with CK transitions - Row address: A0 to A14 - Commands entered on each positive CK edge data and - Column address: A0 to A9 data mask referenced to both edges of DQS - Eight internal banks for concurrent operation - Data mask (DM) for write data - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) - Posted CAS by programmable additive latency for better - Burst type (BT) : command and data bus efficiency - Sequential (8, 4 with BC) - On-Die Termination (ODT) for better signal quality - Interleave (8, 4 with BC) - Synchronous ODT - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11,13 - Dynamic ODT - CAS Write Latency (CWL) : 5, 6, 7, 8, 9 - Precharge : auto precharge option for each burst access - Asynchronous ODT - Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) - Multi Purpose Register (MPR) for pre-defined pattern read - Refresh : auto-refresh, self-refresh out - Refresh cycles : - Average refresh period - ZQ calibration for DQ drive and ODT 7.8 s at -40C Tc +85C - Programmable Partial Array Self-Refresh (PASR) 3.9 s at +85C < Tc +95C - RESET pin for Power-up sequence and reset function - Operating case temperature range - SRT range : Normal/extended - Commercial Tc = 0C to +95C - Programmable Output driver impedance control - Industrial Tc = -40C to +95C Table 1. Ordering Information Part Number Org Temperature MaxClock (MHz) Package AS4C256M16D3LB-12BCN 800 256Mx16 96-ball FBGA Commercial 0C to +95C AS4C256M16D3LB-12BIN 800 256Mx16 96-ball FBGA Industrial -40C to +95C AS4C256M16D3LB-10BCN 933 256Mx16 96-ball FBGA Commercial 0C to +95C AS4C256M16D3LB-10BIN 933 256Mx16 96-ball FBGA Industrial -40C to +95C Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency tRCD (ns ) tRP (ns ) DDR3L-1600 800MHz 11 13.75 13.75 DDR3L-1866 933MHz 1 3 13. 91 13. 91 Confidential - 2 of 54 - Rev.1.2 Feb. 2019

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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