X-On Electronics has gained recognition as a prominent supplier of AS4C256M16D3LC-12BIN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C256M16D3LC-12BIN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C256M16D3LC-12BIN Alliance Memory

AS4C256M16D3LC-12BIN electronic component of Alliance Memory
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Part No.AS4C256M16D3LC-12BIN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM SDRAM - DDR3L
Datasheet: AS4C256M16D3LC-12BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 10.824 ea
Line Total: USD 10.82 
Availability - 11651
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11651
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 10.824
10 : USD 10.175
25 : USD 9.889
100 : USD 8.976
209 : USD 8.514
418 : USD 8.437
1045 : USD 8.437
2508 : USD 8.437
5016 : USD 8.107

174
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 17.556
5 : USD 16.352
25 : USD 13.958
100 : USD 12.838

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AS4C256M16D3LC-12BIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C256M16D3LC-12BIN and other electronic components in the DRAM category and beyond.

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AS4C256M16D3LC Revision History 4Gb AS4C256M16D3 LC 1.35V 96 ball FBGA PACKAGE Revision Details Date Rev 1.0 Initial Release Mar.2020 Alliance Memory Inc. 12815 NE 124th Street Suite D,Kirkland WA 98034 USA Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 88 - Rev.1.0 March 2020AS4C256M16D3LC 256M x 16 bit DDR3L Synchronous DRAM (SDRAM) Initial Release (Rev. 1.0, Mar. /2020) Features Overview JEDEC Standard Compliant The 4Gb Double-Data-Rate-3 (DDR3L) DRAMs is double data rate architecture to achieve high-speed Power supplies: V & V =+1.35V (1.283V to 1.45V) DD DDQ operation. It is internally configured as an eight bank Backward compatible to V & V = +1.5V 0.075V DD DDQ DRAM. Operating temperature range: The 4Gb chip is organized as 32Mbit x 16 I/Os x 8 bank : T = 0~95 C - Commercial C devices. These synchronous devices achieve high speed - Industrial : T = -40~95 C C double-data-rate transfer rates of up to 1866 Mb/sec/pin Supports JEDEC clock jitter specification for general applications. Fully synchronous operation The chip is designed to comply with all key DDR3L DRAM key features and all of the control and address Fast clock rate: 800/933MHz inputs are synchronized with a pair of externally supplied Differential Clock, CK & CK differential clocks. Inputs are latched at the cross point Bidirectional differential data strobe of differential clocks (CK rising and CK falling). All I/Os - DQS & DQS are synchronized with differential DQS pair in a source 8 internal banks for concurrent operation synchronous fashion. 8n-bit prefetch architecture Pipelined internal architecture Precharge & active power down Programmable Mode & Extended Mode registers Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control Average refresh period - 8192 cycles/64ms (7.8us at -40C T +85C) C - 8192 cycles/32ms (3.9us at +85C T +95C) C Write Leveling ZQ Calibration Dynamic ODT (Rtt Nom & Rtt WR) RoHS compliant Auto Refresh and Self Refresh 96-ball 7.5 x 13.5 x 1.2mm FBGA package - Pb and Halogen Free Table 1. Ordering Information Temperature Product part No Max Clock (MHz) Org Package AS4C256M16D3 LC-10BCN 96-ball FBGA 256M x 16 Commercial 0C to 95C 933 AS4C256M16D3 LC-10BIN Industrial -40C to 95C 256M x 16 933 96-ball FBGA AS4C256M16D3 LC-1 2BCN 96-ball FBGA 256M x 16 Commercial 0C to 95C 800 AS4C256M16D3 LC-1 2BIN 256M x 16 Industrial -40C to 95C 800 96-ball FBGA Table 2. Speed Grade Information Clock Frequency Speed Grade CAS Latency t (ns) t (ns) RP RCD 13 933MHZ DDR3 L-1 866 13.91 13.91 800MHZ 11 DDR3 L-1600 13.75 13.75 Confidential - 2 of 88 - Rev.1.0 March 2020

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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