X-On Electronics has gained recognition as a prominent supplier of AS4C256M32MD4V-062BAN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C256M32MD4V-062BAN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C256M32MD4V-062BAN Alliance Memory

AS4C256M32MD4V-062BAN electronic component of Alliance Memory
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Part No.AS4C256M32MD4V-062BAN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 2 channels 8 bank mobile LPDDR4x 2x8 banks x 32Mx16
Datasheet: AS4C256M32MD4V-062BAN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 21.7383 ea
Line Total: USD 21.74 
Availability - 572
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
572
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 21.7383
10 : USD 20.4922
25 : USD 19.704
100 : USD 19.278
272 : USD 19.1288
544 : USD 19.1182
1088 : USD 19.1075
2584 : USD 19.0968

   
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We are delighted to provide the AS4C256M32MD4V-062BAN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C256M32MD4V-062BAN and other electronic components in the DRAM category and beyond.

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8Gb LPDDR4X SDRAM Revision History For 8Gb LPDDR4X SDRAM 200ball FBGA Package Revision Details Date Rev 1.0 Initial Release Mar 2021 Confidential Rev. 1.0 Mar. 2021 -1 63- 8Gb LPDDR4X SDRAM 1 Overview The LPDDR4X SDRAM is organized as 2 channels per device, and individual channel is 8-banks and 16-bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth. 1.1 Features The 8Gbit LPDDR4X SDRAM offers the following Bidirectional/differential data strobe per byte of key features: data (DQS, DQS ) Configuration: DMI pin support for write data masking and DBI - x32 for 2-channels per device functionality - 8 internal banks per each channel Programmable READ and WRITE latencies (RL/WL) On-Chip ECC: Programmable and on-the-fly burst lengths (BL =16, - Single-bit error correction (per 64-bits), which will 32) maximize reliability Support non target DRAM ODT control - Optional ERR output signal per channel, which Directed per-bank refresh for concurrent bank indicates ECC event occurrence operation and ease of command scheduling - ECC Register, which controls ECC function ZQ Calibration Low-voltage Core and I/O Power Supplies: Operation Temperature: - V = 1.06-1.17V, V = 0.57-0.65V, V = 1.70- DD2 DDQ DD1 Automotive A2 (T = -40C to 105C) - C 1.95V On-chip temperature sensor to control self-refresh rate LVSTL (Low Voltage Swing Terminated Logic) On-chip temperature sensor whose status can be I/O Interface read from MR4 Internal VREF and VREF Training 200-ball x32 Discrete Package Dynamic ODT: (10mm x 14.5mm) - DQ ODT: VSSQ Termination RoHS-compliant, green packaging - CA ODT: VSS Termination Selectable output drive strength (DS) Max. Clock Frequency: 1.6GHz (3.2Gbps for one channel) 16-bit Pre-fetch DDR data bus Single data rate (multiple cycles) command/address bus Table1.SpeedGradeInformation SpeedGrade Clock DataRate ReadLatency tCK(ns) Frequency (Mb/s) (RL) LPDDR4X3200 1600MHz 3200 28 0.625 *Other clock frequencies/data rates supported please refer to AC timing tables. Confidential Rev. 1.0 Mar. 2021 -2 63-

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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