X-On Electronics has gained recognition as a prominent supplier of AS4C32M16SB-7TINTR DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C32M16SB-7TINTR DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C32M16SB-7TINTR Alliance Memory

AS4C32M16SB-7TINTR electronic component of Alliance Memory
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Part No.AS4C32M16SB-7TINTR
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
Datasheet: AS4C32M16SB-7TINTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 15.752 ea
Line Total: USD 15.75 
Availability - 2143
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2143
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 15.752
10 : USD 14.553
25 : USD 13.717
100 : USD 12.991
250 : USD 12.419
500 : USD 12.166
1000 : USD 12.089
2000 : USD 12.056

   
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We are delighted to provide the AS4C32M16SB-7TINTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C32M16SB-7TINTR and other electronic components in the DRAM category and beyond.

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AS4C32M16SB-6TIN AS4C32M16SB-7TIN AS4C32M16SB-7TCN Revision History AS4C32M16SB-7TCN/AS4C32M16SB-7TIN/AS4C32M16SB-6TIN- 54pin TSOPII PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet Jun 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/55 - Rev.1.0 June 2016AS4C32M16SB-6TIN AS4C32M16SB-7TIN AS4C32M16SB-7TCN Overview Features Fast access time from clock: 5/5.4 ns The 512Mb SDRAM is a high-speed CMOS Fast clock rate: 166/143 MHz synchronous DRAM containing 512 Mbits. It is internally configured as 4 Banks of 8M word x 16 Fully synchronous operation DRAM with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, 8M word x 16-bit x 4-bank CLK). Read and write accesses to the SDRAM are Programmable Mode registers burst oriented accesses start at a selected location - CAS Latency: 2 or 3 and continue for a programmed number of locations - Burst Length: 1, 2, 4, 8, or full page in a programmed sequence. Accesses begin with the - Burst Type: Sequential or Interleaved registration of a Bank Activate command which is then followed by a Read or Write command. The - Burst stop function SDRAM provides for programmable Read or Write Auto Refresh and Self Refresh burst lengths of 1, 2, 4, 8, or full page, with a burst 8192 refresh cycles/64ms termination option. An auto precharge function may CKE power down mode be enabled to provide a self-timed row precharge that Single +3.3V 0.3V power supply is initiated at the end of the burst sequence. The Operating Temperature Range: refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode - Commercial: T = 0~70C A register, the system can choose the most suitable - Industrial: T = -40~85C A modes to maximize its performance. These devices Interface: LVTTL are well suited for applications requiring high memory 54-pin 400 mil plastic TSOP II package bandwidth and particularly well suited to high - Pb free and Halogen free performance PC applications. Table 1. Key Specifications AS4C32M16SB -6/7 tCK3 Clock Cycle time (min.) 6/7 tAC3 Access time from CLK (max.) 5/5.4 tRAS Row Active time (min.) 42/42 tRC Row Cycle time (min.) 60/63 Table 2. Ordering Information Part Number Frequency Package Temperature Temp Range AS4C32M16SB-7TCN 143MHz 54 Pin TSOP II Commercial 0C to 70C AS4C32M16SB-7TIN 143MHz 54 Pin TSOP II -40C to 85C Industrial AS4C32M16SB-6TIN 166MHz 54 Pin TSOP II Industrial -40C to 85C Confidential - 2/55 - Rev.1.0 June 2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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