X-On Electronics has gained recognition as a prominent supplier of AS4C32M32MD1A-5BIN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C32M32MD1A-5BIN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C32M32MD1A-5BIN Alliance Memory

AS4C32M32MD1A-5BIN electronic component of Alliance Memory
AS4C32M32MD1A-5BIN Alliance Memory
AS4C32M32MD1A-5BIN DRAM
AS4C32M32MD1A-5BIN  Semiconductors

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Part No. AS4C32M32MD1A-5BIN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
Datasheet: AS4C32M32MD1A-5BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.305 ea
Line Total: USD 8.3 
Availability - 259
Ship by Fri. 10 Jan to Tue. 14 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
259
Ship by Fri. 10 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 8.305
10 : USD 7.777
25 : USD 6.897
100 : USD 6.776
240 : USD 6.611
480 : USD 6.226
1200 : USD 6.226
2640 : USD 6.226
5040 : USD 6.149

   
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We are delighted to provide the AS4C32M32MD1A-5BIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C32M32MD1A-5BIN and other electronic components in the DRAM category and beyond.

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AS4C32M32MD1A-5BIN Revision History 1G (32M x 32) Low Power DDR SDRAM 90ball FBGA Package AS4C32M32MD1A-5BIN Revision Details Date Rev 1.0 Preliminary datasheet Jan 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 64 - Rev.1.0. Jan. 2018AS4C32M32MD1A-5BIN DDR Sync DRAM Features Functionality Low Power Features - Double-data-rate architecture two data transfers - Low voltage power supply. per CLK cycle. - Auto TCSR (Temperature Compensated Self Refresh). - Bidirectional data strobe per byte data (DQS). - Partial Array Self Refresh power-saving mode. - No DLL CLK to DQS is not Synchronized. - Deep Power Down Mode. - Differential CLK inputs( CLK and /CLK ). - Driver Strength Control. - Commands entered on each positive CLK edge. Operating Temperature Ranges - DQS edge-aligned with data for Reads - Industrial (-40 to +85). center-aligned with data for Writes. Package - Four internal banks for concurrent operation. - 90-Ball FBGA ( 8 X 13 X 0.8mm ) - Data masks (DM) for masking write data-one mask Functional Description per byte. The AS4C32M32MD1A Family is high-performance - Programmable burst lengths : 2, 4, 8, 16. CMOS Dynamic RAMs (DRAM) organized as 32M x 32. - Programmable CAS Latency : 2, 3. These devices feature advanced circuit design to provide - Concurrent auto pre-charge option is supported. low active current and extremely low standby current. The - Auto refresh and self refresh modes. device is compatible with the JEDEC standard Low Power DDR SDRAM specifications. - Status read register (SRR) - LVCMOS-compatible inputs. Configuration - 32 Meg X 32 (8Meg X 32 X 4Bank ). Table 1. Ordering Information Temperature Package Product part No Org Max Clock (MHz) 32M x 32 Industrial -40C to 85C 200 Hz AS4C32M32MD1A-5BIN 90-ball FBGA Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency t t (ns) (ns) RCD RP DDR1-400 200 Hz 3 15 15 Confidential - 2 of 64 - Rev.1.0. Jan. 2018

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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