X-On Electronics has gained recognition as a prominent supplier of AS4C32M32MD2A-25BIN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C32M32MD2A-25BIN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C32M32MD2A-25BIN Alliance Memory

AS4C32M32MD2A-25BIN electronic component of Alliance Memory
AS4C32M32MD2A-25BIN Alliance Memory
AS4C32M32MD2A-25BIN DRAM
AS4C32M32MD2A-25BIN  Semiconductors

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See Product Specifications
Part No. AS4C32M32MD2A-25BIN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 1G 1.2V/1.8V 32Mx32 Mobile DDR2 E-Temp
Datasheet: AS4C32M32MD2A-25BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.163 ea
Line Total: USD 9.16 
Availability - 60
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
60
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 9.163
10 : USD 8.14
25 : USD 7.667
100 : USD 6.732
256 : USD 6.512
512 : USD 6.226
1024 : USD 6.116
2560 : USD 6.05
5120 : USD 5.973

   
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RoHS - XON
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We are delighted to provide the AS4C32M32MD2A-25BIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C32M32MD2A-25BIN and other electronic components in the DRAM category and beyond.

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AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN Revision History 1G (64M x 16 and 32M x 32) Low Power DDR 2 SDRAM 134ball FBGA Package AS4C64M16MD2A-25BIN/AS4C32M32MD2A-25BIN Revision Details Date Rev 1.0 Preliminary datasheet Jan 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 125 - Rev.1.0 Jan. 2018AS4C32M32MD2A-25BIN AS4C64M16MD2A-25BIN DDR Sync DRAM Features Functionality Configuration - VDD2 = 1.141.30V - 64 Meg X 16 (8 Meg X 16 X 8 Banks). - VDDCA/VDDQ = 1.141.30V - 32 Meg X 32 (4 Meg X 32 X 8 Banks). - VDD1 = 1.701.95V Low Power Features - Interface : HSUL 12 - Low voltage power supply. - Data width : x16 / x32 - Auto TCSR (Temperature Compensated Self Refresh). - Clock frequency range : 400 MHz - PASR (Partial Array Self Refresh) power-saving mode. - Four-bit pre-fetch DDR architecture - DPD (Deep Power Down) Mode. - Eight internal banks for concurrent operation - DS (Driver Strength) Control. - Multiplexed, double data rate, command/address inputs Timing Cycle Time commands entered on every CK edge -2.5ns RL = 6 - Bidirectional/differential data strobe per byte of -3.0ns RL = 5 data(DQS/DQS ). Operating Temperature Ranges - DM masks write date at the both rising and falling edge of - Industrial (-40 to +85). the data strobe Package - Programmable READ and WRITE latencies (RL/WL) - 134-Ball FBGA(10.0mm x 11.5mm x 1.0mm) - Programmable burst lengths: 4, 8, or 16 - Auto refresh and self refresh supported - All bank auto refresh and per bank auto refresh supported - Clock stop capability Table 1. Ordering Information Product Part No. Org. Temperature Max Clock (MHz) Package AS4C64M16M D2A-25BIN 64M x 16 -40C to 85C 134-ball FBGA 400 AS4C32M32MD2A-25BIN 32M x 32 -40C to 85C 134-ball FBGA 400 Table 2. Speed Grade Information Speed Grade Clock Frequency RL WL t (ns) t (ns) RCD RP 400 MHz 6 DDR2L-800 3 18 18 Confidential - 2 of 125 - Rev.1.0 Jan. 2018

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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