AS4C4M16D1 4M x 16 DDR Synchronous DRAM (SDRAM) Alliance Memory Confidential Advanced (Rev. 1.0, May /2011) Overview Features The AS4C4M16D1 DDR SDRAM is a high- Fast clock rate: 200MHz speed CMOS double data rate synchronous DRAM Differential Clock CK & CK containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface Bi-directional DQS (all signals are registered on the positive edge of the DLL enable/disable by EMRS clock signal, CK). Data outputs occur at both rising Fully synchronous operation edges of CK and . Read and write accesses to CK Internal pipeline architecture the SDRAM are burst oriented accesses start at a Four internal banks, 1M x 16-bit for each bank selected location and continue for a programmed Programmable Mode and Extended Mode Registers number of locations in a programmed sequence. - CAS Latency: 3 Accesses begin with the registration of a - Burst length: 2, 4, 8 BankActivate command which is then followed by a Read or Write command. - Burst Type: Sequential & Interleaved Individual byte writes mask control The AS4C4M16D1 provides programmable Read or DM Write Latency = 0 Write burst lengths of 2, 4, 8. An auto precharge Auto Refresh and Self Refresh function may be enabled to provide a self-timed row 4096 refresh cycles / 64ms precharge that is initiated at the end of the burst Operating temperature range sequence. The refresh functions, either Auto or Self Refresh are easy to use. In addition, AS4C4M16D1 - Commercial (0 ~ 70C) features programmable DLL option. By having a - Industrial (-40 ~ 85C) programmable mode register and extended mode Precharge & active power down register, the system can choose the most suitable Power supplies: V & V = 2.5V 0.2V DD DDQ modes to maximize its performance. These devices Interface: SSTL 2 I/O Interface are well suited for applications requiring high Package: 66 Pin TSOP II, 0.65mm pin pitch memory bandwidth and high performance. - Pb free and Halogen free Table 1.Ordering Information Part Number Clock Data Rate Package Temperature Temp Range AS4C4M16D1-5TCN 200MHz 400Mbps/pin 66pin TSOPII Commercial 0 ~ 70C Industrial -40 ~ 85C AS4C4M16D1-5TIN 200MHz 400Mbps/pin 66pin TSOPII T: indicates TSOP II package C: indicates Commercial temp. I: indicates Industrial temp. N: indicates lead free ROHS Alliance Memory, Inc. 551 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory, Inc. reserves the right to change products or specification without notice. AS4C4M16D1 Figure 1. Pin Assignment (Top View) VDD 1 66 VSS DQ0 2 65 DQ15 VDDQ 3 64 VSSQ DQ1 4 63 DQ14 DQ2 5 62 DQ13 6 61 VSSQ VDDQ DQ3 7 60 DQ12 DQ4 8 59 DQ11 VDDQ 9 58 VSSQ DQ5 10 57 DQ10 DQ6 11 56 DQ9 VSSQ 12 55 VDDQ DQ7 13 54 DQ8 14 53 NC NC VDDQ 15 52 VSSQ LDQS 16 51 UDQS NC 17 50 NC VDD 18 49 VREF NC 19 48 VSS LDM 20 47 UDM WE 21 46 CK CAS 22 45 CK RAS 23 44 CKE CS 24 43 NC 25 42 NC NC BA0 26 41 A11 BA1 27 40 A9 A10/AP 28 39 A8 A0 29 38 A7 A1 30 37 A6 A2 31 36 A5 A3 32 35 A4 33 34 VDD VSS Alliance Memory, lnc. Confidential 2 Rev. 1.0 May /2011