X-On Electronics has gained recognition as a prominent supplier of AS4C4M16SA-6BINTR DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C4M16SA-6BINTR DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C4M16SA-6BINTR Alliance Memory

AS4C4M16SA-6BINTR electronic component of Alliance Memory
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Part No.AS4C4M16SA-6BINTR
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM
Datasheet: AS4C4M16SA-6BINTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.454 ea
Line Total: USD 3.45 
Availability - 5795
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5795
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 3.454
10 : USD 3.168
100 : USD 2.838
250 : USD 2.827
500 : USD 2.728
1000 : USD 2.64
2500 : USD 2.508
5000 : USD 2.431
10000 : USD 2.387

   
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We are delighted to provide the AS4C4M16SA-6BINTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C4M16SA-6BINTR and other electronic components in the DRAM category and beyond.

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AS4C4M16SA-C&I Revision History Revision Details Date Rev 1.0 Preliminary datasheet. June 2013 Rev 2.0 Modify some typing errors. March 2014 Rev 3.0 Add AS4C4M16SA-6TCN part. March 2015 Rev 4.0 Add AS4C4M16SA-7B2CN 60-ball package and Part Number. March 2017 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. Confidential - 1 of 56 - Rev.4.0 March 2017AS4C4M16SA-C&I 64M (4M x 16 bit) Synchronous DRAM (SDRAM) Confidential Advanced (Rev. 3.0, Mar. /2015) Features Overview Fast access time from clock: 5.4/5.4 ns The 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally Fast clock rate: 166/143 MHz configured as 4 Banks of 1M word x 16 DRAM with a Fully synchronous operation synchronous interface (all signals are registered on Internal pipelined architecture the positive edge of the clock signal, CLK). Read and 1M word x 16-bit x 4-bank write accesses to the SDRAM are burst oriented Programmable Mode registers accesses start at a selected location and continue for - CAS Latency: 2 or 3 a programmed number of locations in a programmed - Burst Length: 1, 2, 4, 8, or full page sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a - Burst Type: Sequential or Interleaved Read or Write command. - Burst stop function The SDRAM provides for programmable Read or - Optional drive strength control Write burst lengths of 1, 2, 4, 8, or full page, with a Operating temperature range burst termination option. An auto precharge function - Commercial (0 ~ 70C) may be enabled to provide a self-timed row precharge - Industrial (-40 ~ 85C) that is initiated at the end of the burst sequence. The Auto Refresh and Self Refresh refresh functions, either Auto or Self Refresh are easy 4096 refresh cycles/64ms to use. By having a programmable mode register, the CKE power down mode system can choose the most suitable modes to maximize its performance. These devices are well Single +3.3V 0.3V power supply suited for applications requiring high memory Interface: LVTTL bandwidth and particularly well suited to high 54-pin 400 mil plastic TSOP II package performance PC applications. 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package 60-ball 6.4 x 10.1 x 1.0mm FBGA package - All parts ROHS Compliant Table 1. Key Specifications AS4C4M16S -6/7 tCK3 Clock Cycle time(min.) 6/7 ns tAC3 Access time from CLK (max.) 5.4/5.4 ns tRAS Row Active time(min.) 42/42 ns tRC Row Cycle time(min.) 60/63 ns Table 2.Ordering Information Part Number Frequency Package Temperature Temp Range AS4C4M16SA-6BIN 166MHz 54-Ball FBGA Industrial -40 ~ 85C AS4C4M16SA-7BCN 143MHz 54-Ball FBGA Commercial 0 ~ 70C AS4C4M16SA-6TIN 166MHz 54-Pin TSOPII Industrial -40 ~ 85C AS4C4M16SA-7TCN 143MHz 54-Pin TSOPII Commercial 0 ~ 70C AS4C4M16SA-6TCN 166MHz 54-Pin TSOPII Commercial 0 ~ 70C AS4C4M16SA-7B2CN 143MHz 60-Ball FBGA Commercial 0 ~ 70C B: indicates FBGA package B2: indicates a second FBGA package option T: indicates TSOP II package N: indicates Pb and Halogen Free Confidential - 2 of 56 - Rev.4.0 March 2017

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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