X-On Electronics has gained recognition as a prominent supplier of AS4C4M16SB-6TIN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C4M16SB-6TIN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C4M16SB-6TIN Alliance Memory

AS4C4M16SB-6TIN electronic component of Alliance Memory
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Part No.AS4C4M16SB-6TIN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM
Datasheet: AS4C4M16SB-6TIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.5079 ea
Line Total: USD 2.51 
Availability - 2961
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2961
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.5079
10 : USD 2.14
108 : USD 2.0509
5076 : USD 2.0174

   
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We are delighted to provide the AS4C4M16SB-6TIN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C4M16SB-6TIN and other electronic components in the DRAM category and beyond.

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AS4C4M16SB Revision History 4M x 16 SDRAM 54-PIN TSOP Package Revision Details Date Rev 1.0 Initial Release Apr. 2021 Alliance Memory Inc. reserves the right to change products or specification without notice. 12815 NE 124th Street Suite D, Kirkland, WA 98034 USA Main +1(425)868-4456 Fax:+1 (425)898-8628 Confidential - 154 - Rev.1.0 Apr. 2021AS4C4M16SB 4M x 16 bit Synchronous DRAM (SDRAM) (Rev. 1.0, Apr. /2021) Features Overview The AS4C4M16SB SDRAM is a high-speed Fast access time from clock: 5 ns CMOS synchronous DRAM containing 64 Mbits. It is Fast clock rate: 166 MHz internally configured as 4 Banks of 1M word x 16 Fully synchronous operation DRAM with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, 1M word x 16-bit x 4-bank CLK). Read and write accesses to the SDRAM are Programmable Mode registers burst oriented accesses start at a selected location and continue for a programmed number of locations - CAS Latency: 2 or 3 in a programmed sequence. Accesses begin with - Burst Length: 1, 2, 4, 8, or full page the registration of a BankActivate command which is - Burst Type: Sequential or Interleaved then followed by a Read or Write command. - Burst stop function Auto Refresh and Self Refresh The AS4C4M16SB provides for programmable Read 4096 refresh cycles/64ms or Write burst lengths of 1, 2, 4, 8, or full page, with CKE power down mode a burst termination option. An auto precharge function may be enabled to provide a self-timed row Single +3.3V 0.3V power supply precharge that is initiated at the end of the burst Operating temperature: T = -40~85C (Industrial) A sequence. The refresh functions, either Auto or Self Interface: LVTTL Refresh are easy to use. By having a programmable Package: Pb free and Halogen free mode register, the system can choose the most - 54-pin 400 mil plastic TSOP II suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications. Table 1. Key Specifications -6 Unit AS4C4M16SB-6TIN 6 ns Clock Cycle time(min.) tCK3 5 ns Access time from CLK (max.) tAC3 42 ns Row Active time(min.) tRAS 60 ns Row Cycle time(min.) tRC Table 2. Ordering Information Package Temperature Temp Range Frequency Part Number AS4C4M16SB-6TIN 166MHz 54 Pin TSOP II Industrial -40C to 85C Confidential - 254 - Rev.1.0 Apr. 2021

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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