X-On Electronics has gained recognition as a prominent supplier of AS4C512M8D3LA-12BCN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C512M8D3LA-12BCN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C512M8D3LA-12BCN Alliance Memory

AS4C512M8D3LA-12BCN electronic component of Alliance Memory
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Part No.AS4C512M8D3LA-12BCN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 4G 1.35V 800MHz 512M x 8 DDR3
Datasheet: AS4C512M8D3LA-12BCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 13.0158
10 : USD 11.7277
25 : USD 11.4611
50 : USD 10.9445
100 : USD 10.0723
220 : USD 9.5605
440 : USD 9.4675
1100 : USD 9.3279
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the AS4C512M8D3LA-12BCN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C512M8D3LA-12BCN and other electronic components in the DRAM category and beyond.

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AS4C512M8D3LA-12BCN Revision History 4Gb AS4C512M8D3LA-12BCN - 78 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet May. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential -183- Rev. 1.0 May 2016AS4C512M8D3LA-12BCN 512M x 8 bit DDR3L Synchronous DRAM (SDRAM) Features Overview JEDEC Standard Compliant The 4Gb Double-Data-Rate-3 (DDR3L) DRAMs is double data rate architecture to achieve high-speed Power supplies: V & V = +1.35V DD DDQ operation. It is internally configured as an eight bank Backward compatible to V & V = 1.5V 0.075V DD DDQ DRAM. Operating temperature: 0~95 C (TC) The 4Gb chip is organized as 64Mbit x 8 I/Os x 8 bank Supports JEDEC clock jitter specification devices. These synchronous devices achieve high Fully synchronous operation speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. Fast clock rate: 800MHz The chip is designed to comply with all key DDR3L Differential Clock, CK & CK DRAM key features and all of the control and address Bidirectional differential data strobe inputs are synchronized with a pair of externally - DQS & DQS supplied differential clocks. Inputs are latched at the 8 internal banks for concurrent operation cross point of differential clocks (CK rising and CK 8n-bit prefetch architecture falling). All I/Os are synchronized with differential DQS Pipelined internal architecture pair in a source synchronous fashion. These devices operate with a single 1.35V -0.067V Precharge & active power down /+0.1V power supply and are available in BGA packages. Programmable Mode & Extended Mode registers Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control 8192 refresh cycles / 64ms - Average refresh period 7.8s 0C TC +85C 3.9s +85C TC +95C Write Leveling ZQ Calibration Dynamic ODT (Rtt Nom & Rtt WR) RoHS compliant Auto Refresh and Self Refresh 78-ball 9 x 10.5 x 1.0mm FBGA package - Pb and Halogen Free Table 1. Ordering Information Temperature Max Clock (MHz) Org Product part No Package Commercial 0C to 95C AS4C512M8D3LA-12BCN 800 78-ball FBGA 512M x 8 Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency t (ns) t (ns) RCD RP 13.75 13.75 800 MHz 11 DDR3L-1600 Confidential -283- Rev. 1.0 May 2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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