X-On Electronics has gained recognition as a prominent supplier of AS4C64M16D3B-12BINTR DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C64M16D3B-12BINTR DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C64M16D3B-12BINTR Alliance Memory

AS4C64M16D3B-12BINTR electronic component of Alliance Memory
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Part No.AS4C64M16D3B-12BINTR
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM Chip DDR3 SDRAM 1G-Bit 64Mx16 Bit 800MHz 1.5V 96-Pin FBGA T/R
Datasheet: AS4C64M16D3B-12BINTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.051 ea
Line Total: USD 7.05 
Availability - 605
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
605
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 7.051
10 : USD 6.6
25 : USD 6.457
100 : USD 5.852
250 : USD 5.764
500 : USD 5.478
1000 : USD 5.291
2000 : USD 5.291
4000 : USD 5.225

   
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We are delighted to provide the AS4C64M16D3B-12BINTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C64M16D3B-12BINTR and other electronic components in the DRAM category and beyond.

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AS4C64M16D3B Revision History 1Gb DDR3 AS4C64M 16D3B 96ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet Jan. 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 86 - Rev.1.0 Jan.2018AS4C64M16D3B 64M x 16 bit DDR3 Synchronous DRAM (SDRAM) Advance (Rev. 1.0, Jan. /201 8) Features Overview JEDEC Standard Compliant The 1Gb Double-Data-Rate-3 DRAMs is double data rate architecture to achieve high-speed operation. Power supplies: V & V = +1.5V 0.075V DD DDQ It is internally configured as an eight bank DRAM. Industrial temperature: The 1Gb chip is organized as 8Mbit x 16 I/Os x 8 : T = 0~95 C - Commercial C bank devices. These synchronous devices achieve - Industrial : T = -40~95 C C high speed double-data-rate transfer rates of up to Supports JEDEC clock jitter specification 1 600 Mb/sec/pin for general applications. Fully synchronous operation The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address Fast clock rate: 800MHz inputs are synchronized with a pair of externally Differential Clock, CK & CK supplied differential clocks. Inputs are latched at the Bidirectional differential data strobe cross point of differential clocks (CK rising and CK - DQS & DQS falling). All I/Os are synchronized with differential DQS 8 internal banks for concurrent operation pair in a source synchronous fashion. 8n-bit prefetch architecture These devices operate with a single 1.5V 0.075V Pipelined internal architecture power supply and are available in BGA packages. Precharge & active power down Programmable Mode & Extended Mode registers Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control 8192 refresh cycles / 64ms - Average refresh period 7.8 s -40 C TC +85 C 3.9 s +85 C TC +95 C Write Leveling ZQ Calibration Dynamic ODT (Rtt Nom & Rtt WR) RoHS compliant Auto Refresh and Self Refresh 96-ball 9 x 13 x 1.2mm FBGA package - Pb and Halogen Free Table 1. Ordering Information Temperature Org Max Clock (MHz) Product part No Package 800 Commercial 0C to 95C 96-ball FBGA AS4C64M16D3B-12BCN 64M x 16 800 Industrial -40C to 95C 96-ball FBGA AS4C64M16D3B-12BIN 64M x 16 Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency t t (ns) (ns) RCD RP 800 MHz 11 13.75 13.75 DDR3-1600 Confidential - 2 of 86 - Rev.1.0 Jan.2018

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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