X-On Electronics has gained recognition as a prominent supplier of AS4C8M16D1-5BCN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C8M16D1-5BCN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C8M16D1-5BCN Alliance Memory

AS4C8M16D1-5BCN electronic component of Alliance Memory
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Part No.AS4C8M16D1-5BCN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1
Datasheet: AS4C8M16D1-5BCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.872 ea
Line Total: USD 3.87 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 3.872
10 : USD 3.201
100 : USD 3.091
240 : USD 2.981
480 : USD 2.904
1200 : USD 2.882
2640 : USD 2.86
5040 : USD 2.827

   
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We are delighted to provide the AS4C8M16D1-5BCN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C8M16D1-5BCN and other electronic components in the DRAM category and beyond.

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128M DDR1 -AS4C8M16D1 Revision History AS4 D - -ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet D 201 O O L D Q F H 0 H P R U , Q F 7 D O R U : D 6 D Q & D U O R V & 7 ( / ) O O L D Q F H 0 H P R U , Q F U H V H U Y H V W K H U L J K W W R F K D Q J H S U R G X F W V R U V S H F L I L F D W L R Q Z L W K R X W Q R W L F H &RQILGHQWLDO 5HY 0D 128M DDR1 -AS4C8M16D1 )HDWXUHV Fast clock rate: 250/200MHz Operating temperature: - Commercial (0C~70 C) - Industrial (-40C~85 C) Differential Clock CK & input CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture Four internal banks, 2M x 16-bit for each bank Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved Individual byte write mask control DM Write Latency = 0 Auto Refresh and Self Refresh 4096 refresh cycles / 64ms Precharge & active power down Power supplies: VDD & VDDQ = 2.5V 0.2V Interface: SSTL 2 I/O Interface Package: 60-Ball, 8x13x1.2 mm (max) FBGA - Pb free and Halogen free &RQILGHQWLDO 5HY 0D

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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