X-On Electronics has gained recognition as a prominent supplier of AS4C8M32SA-7BCN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C8M32SA-7BCN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C8M32SA-7BCN Alliance Memory

AS4C8M32SA-7BCN electronic component of Alliance Memory
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Part No.AS4C8M32SA-7BCN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 256Mb, 3.3V, 143Mhz 8M x 32 SDRAM
Datasheet: AS4C8M32SA-7BCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.789 ea
Line Total: USD 9.79 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 9.789
10 : USD 8.7625
25 : USD 8.55
100 : USD 7.488
190 : USD 7.104
570 : USD 6.708
1140 : USD 6.648

   
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We are delighted to provide the AS4C8M32SA-7BCN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C8M32SA-7BCN and other electronic components in the DRAM category and beyond.

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AS4C8M32SA-6BIN / AS4C8M32SA-6BCN AS4C8M32SA-7BIN / AS4C8M32SA-7BCN Revision History AS4C8M32SA 90ball FBGA PACKAGE Revision Details Date Rev 1.0 Initial Issue Nov. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 55 - Rev.1.0 Nov. 2016AS4C8M32SA-6BIN / AS4C8M32SA-6BCN AS4C8M32SA-7BIN / AS4C8M32SA-7BCN Features Overview Fast access time from clock: 5/5.4 ns The AS4C8M32SA SDRAM is a high-speed CMOS Fast clock rate: 166/143MHz synchronous DRAM containing 256 Mbits. It is internally Fully synchronous operation configured as 4 Banks of 2M word x 32 DRAM with a synchronous interface (all signals are registered on the Internal pipelined architecture positive edge of the clock signal, CLK). Read and write 2M word x 32-bit x 4-bank accesses to the SDRAM are burst oriented accesses Programmable Mode registers start at a selected location and continue for a - CAS Latency: 2, or 3 programmed number of locations in a programmed - Burst Length: 1, 2, 4, 8, or full page sequence. Accesses begin with the registration of a - Burst Type: Sequential or Interleaved BankActivate command which is then followed by a - Burst stop function Read or Write command. The AS4C8M32SA provides for programmable Auto Refresh and Self Refresh Read or Write burst lengths of 1, 2, 4, 8, or full page, 4096 refresh cycles/64ms with a burst termination option. An auto precharge CKE power down mode function may be enabled to provide a self-timed row Single +3.3V 0.3V power supply precharge that is initiated at the end of the burst Operating temperature: sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable - Industrial: TA = -40~85C mode register, the system can choose the most - Commercial: TA = 0~70C suitable modes to maximize its performance. These Interface: LVTTL devices are well suited for applications requiring high 90-ball 8 x 13 x 1.2mm FBGA package memory bandwidth and particularly well suited to high - Pb free and Halogen free performance PC applications. Table 1. Key Specifications AS4C8M32SA -6/7 tCK3 6/7 ns Clock Cycle time (min.) 5.4/5.4 ns tAC3 Access time from CLK (max.) tRAS 42/42 n s Row Active time (min.) tRC Row Cycle time (min.) 60/63 ns Table 2. Ordering Information Part Number Org Temperature MaxClock (MHz) Package 166 8Mx32 AS4C8M32SA-6BIN Industrial -40C to +85C 90-ball FBGA 8Mx32 Industrial -40C to +85C AS4C8M32SA-7BIN 143 90-ball FBGA 8Mx32 Commercial 0C to +70C 166 AS4C8M32SA-6BCN 90-ball FBGA 8Mx32 Commercial 0C to +70C 143 90-ball FBGA AS4C8M32SA-7BCN Confidential - 2 of 55 - Rev.1.0 Nov. 2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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