X-On Electronics has gained recognition as a prominent supplier of MT46V16M16TG-5B IT:M DRAM across the USA, India, Europe, Australia, and various other global locations. MT46V16M16TG-5B IT:M DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT46V16M16TG-5B IT:M Alliance Memory

MT46V16M16TG-5B IT:M electronic component of Alliance Memory
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Part No.MT46V16M16TG-5B IT:M
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM DDR1 256M 16M X 16 TSOP I TEMP , LEADED
Datasheet: MT46V16M16TG-5B IT:M Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.2169
10 : USD 2.8815
25 : USD 2.8358
50 : USD 2.8281
100 : USD 2.5232
250 : USD 2.447
500 : USD 2.4394
1000 : USD 2.2717
2000 : USD 2.0681
N/A

Obsolete
   
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We are delighted to provide the MT46V16M16TG-5B IT:M from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT46V16M16TG-5B IT:M and other electronic components in the DRAM category and beyond.

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256Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate (DDR) SDRAM MT46V64M4 16 Meg x 4 x 4 banks MT46V32M8 8 Meg x 8 x 4 banks MT46V16M16 4 Meg x 16 x 4 banks Features Options Marking V = 2.5V 0.2V V = 2.5V 0.2V Configuration DD DDQ 1 V = 2.6V 0.1V V = 2.6V 0.1V (DDR400) 64 Meg x 4 (16 Meg x 4 x 4 banks) 64M4 DD DDQ Bidirectional data strobe (DQS) transmitted/ 32 Meg x 8 (8 Meg x 8 x 4 banks) 32M8 received with data, that is, source-synchronous data 16 Meg x 16 (4 Meg x 16 x 4 banks) 16M16 capture (x16 has two one per byte) Plastic package OCPL Internal, pipelined double data rate (DDR) 66-pin TSOP TG architecture two data accesses per clock cycle 66-pin TSOP (Pb-free) P Differential clock inputs (CK and CK ) Plastic package Commands entered on each positive CK edge 60-ball FBGA (8mm x 12.5mm) CV DQS edge-aligned with data for READs center- 60-ball FBGA (8mm x 12.5mm) CY aligned with data for WRITEs (Pb-free) DLL to align DQ and DQS transitions with CK Timing cycle time 3 Four internal banks for concurrent operation 5ns CL = 3 (DDR400) -5B 2 Data mask (DM) for masking write data 6ns CL = 2.5 (DDR333) FBGA only -6 2 (x16 has two one per byte) 6ns CL = 2.5 (DDR333) TSOP only -6T Programmable burst lengths (BL): 2, 4, or 8 Self refresh Auto refresh Standard None 64ms, 8192-cycle Low-power self refresh L Longer-lead TSOP for improved reliability (OCPL) Temperature rating 2.5V I/O (SSTL 2-compatible) Commercial (0 q C to +70 q C) None Concurrent auto precharge option supported Industrial (40q C to +85 q C) IT t t t RAS lockout supported ( RAP = RCD) Revision 4 x4, x8, x16 :K x4, x8, x16 :M Notes: 1. DDR400 devices operating at < DDR333 conditions can use V /V = 2.5V +0.2V. DD DDQ 2. Available only on Revision K. 3. Available only on Revision M. 4. Not recommended for new designs. Table 1: Key Timing Parameters CL = CAS (READ) latency MIN clock rate with 50% duty cycle at CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75), and CL = 3 (-5B) Clock Rate (MHz) Access DQSDQ Speed Grade CL = 2 CL = 2.5 CL = 3 Data-Out Window Window Skew -5B 133 167 200 1.6ns 0.70ns 0.40ns -6 133 167 n/a 2.1ns 0.70ns 0.40ns 6T 133 167 n/a 2.0ns 0.70ns 0.45ns -75E/-75Z 133 133 n/a 2.5ns 0.75ns 0.50ns -75 100 133 n/a 2.5ns 0.75ns 0.50ns PDF: 09005aef80768abb/Source: 09005aef82a95a3a Micron Technology, Inc., reserves the right to change products or specifications without notice. 256Mb DDR x4x8x16 D1.fm - 256Mb DDR: Rev. S, Core DDR: Rev. E 3/15 EN 1 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 256Mb: x4, x8, x16 DDR SDRAM Features Table 2: Addressing Parameter 64 Meg x 4 32 Meg x 8 16 Meg x 16 Configuration 16 Meg x 4 x 4 banks 8 Meg x 8 x 4 banks 4 Meg x 16 x 4 banks Refresh count 8K 8K 8K Row address 8K (A 12:0 ) 8K (A 12:0 ) 8K (A 12:0 ) Bank address 4 (BA 1:0 ) 4 (BA 1:0 ) 4 (BA 1:0 ) Column address 2K (A 9:0 , A11) 1K (A 9:0 ) 512 (A 8:0 ) Table 3: Speed Grade Compatibility Marking PC3200 (3-3-3) PC2700 (2.5-3-3) PC2100 (2-2-2) PC2100 (2-3-3) PC2100 (2.5-3-3) PC1600(2-2-2) 1 Yes Yes Yes Yes Yes Yes -5B Yes Yes Yes Yes Yes -6 Yes Yes Yes Yes Yes -6T Yes Yes Yes Yes -75E Yes Yes Yes -75Z Yes Yes -75 -5B -6/-6T -75E -75Z -75 -75 Notes: 1. The -5B device is backward compatible with all slower speed grades. The voltage range of -5B device operating at slower speed grades is V = V = 2.5V 0.2V. DD DDQ Figure 1: 256Mb DDR SDRAM Part Numbers Example Part Number: MT46V16M16P-6T:M : - Sp. MT46V Configuration Package Speed Temp. Revision Op. Configuration Revision 64 Meg x 4 64M4 x4, x8, x16 :K 32 Meg x 8 32M8 x4, x8, x16 :M 16 Meg x 16 16M16 Package Operating Temp. 400-mil TSOP TG Commercial 400-mil TSOP (Pb-free) P IT Industrial 8mm x 12.5mm FBGA CV 8mm x 12.5mm FBGA (Pb-free) CY Special Options Standard L Low power Speed Grade t -5B CK = 5ns, CL = 3 t -6 CK = 6ns, CL = 2.5 t -6T CK = 6ns, CL = 2.5 PDF: 09005aef80768abb/Source: 09005aef82a95a3a Micron Technology, Inc., reserves the right to change products or specifications without notice. 256Mb DDR x4x8x16 D1.fm - 256Mb DDR: Rev. S, Core DDR: Rev. E 3/15 EN 2 2003 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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