AOT298L/AOB298L/AOTF298L Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 100 V D GS DSS V =100V, V =0V 1 DS GS I Zero Gate Voltage Drain Current DSS A T =55C 5 J I Gate-Body leakage current V =0V, V =20V 100 nA GSS DS GS V =V I =250A V Gate Threshold Voltage 2.7 3.3 4.1 V GS(th) DS GS D V =10V, V =5V I On state drain current 130 A D(ON) GS DS V =10V, I =20A 12 14.5 GS D R Static Drain-Source On-Resistance m DS(ON) T =125C 19 24 J V =5V, I =20A g Forward Transconductance 30 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 70 A S DYNAMIC PARAMETERS C Input Capacitance 1250 1670 pF iss C Output Capacitance V =0V, V =50V, f=1MHz 727 970 pF GS DS oss C Reverse Transfer Capacitance 25 43 pF rss R Gate resistance f=1MHz 0.8 2 3 g SWITCHING PARAMETERS Q (10V) Total Gate Charge 19 27 nC g Q Gate Source Charge V =10V, V =50V, I =20A 5.5 nC GS DS D gs Q Gate Drain Charge 6 nC gd t Turn-On DelayTime 7.5 ns D(on) t Turn-On Rise Time V =10V, V =50V, R =2.5, 14 ns r GS DS L R =3 t Turn-Off DelayTime 15 ns GEN D(off) tt TTuurrnn--OOffff FFaallll TTiimmee 1144 nnss ff t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 39 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 140 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150C. The value in any given application depends on DSM JA the user s specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P is based on T =175C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current limited by package. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A I. The spike duty cycle 5% max, limited by junction temperature T =120C. J(MAX) APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.4.0: July 2016 www.aosmd.com Page 2 of 7