AOD4286/AOI4286 100V N-Channel MOSFET General Description Product Summary V 100V The AOD4286, AOI4286 uses trench MOSFET DS technology that is uniquely optimized to provide the most I (at V =10V) 14A D GS efficient high frequency switching performance. Both R (at V =10V) < 68m DS(ON) GS conduction and switching power losses are minimized R (at V =4.5V) < 92m DS(ON) GS due to an extremely low combination of R , Ciss and DS(ON) Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested TO252 TO-251A DPAK IPAK D TopView Bottom View Top View Bottom View D D D G G S D S G D S D S G G AOD4286 AOI4286 S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 110000 VV DS Gate-Source Voltage V 20 V GS T =25C 14 C Continuous Drain I D T =100C Current 10 A C C Pulsed Drain Current I 25 DM T =25C 4 A Continuous Drain I A DSM Current T =70C 3 A C Avalanche Current I 4 A AS C Avalanche energy L=0.1mH E 0.8 mJ AS T =25C 30 C P W D B Power Dissipation T =100C 15 C T =25C 2.5 A P W DSM A Power Dissipation T =70C 1.6 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 15 20 C/W R A D JA Maximum Junction-to-Ambient Steady-State 41 50 C/W Maximum Junction-to-Case Steady-State R 4 5 C/W JC Rev.1. 0: October 2013 www.aosmd.com Page 1 of 6 AOD4286/AOI4286 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 100 V D GS DSS V =100V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.7 2.25 2.9 V GS(th) DS GS D I On state drain current V =10V, V =5V 25 A GS DS D(ON) V =10V, I =5A 55.5 68 GS D m R Static Drain-Source On-Resistance T =125C 104 126 DS(ON) J V =4.5V, I =3A 72.5 92 m GS D V =5V, I =5A g Forward Transconductance 14 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.76 1 V S GS SD I Maximum Body-Diode Continuous Current 14 A S DYNAMIC PARAMETERS C Input Capacitance 390 pF iss V =0V, V =50V, f=1MHz C Output Capacitance 30 pF oss GS DS C Reverse Transfer Capacitance 3 pF rss R Gate resistance f=1MHz 7 g SWITCHING PARAMETERS Q (10V) Total Gate Charge 5.8 10 nC g Q (4.5V) Total Gate Charge 2.8 5 nC g V =10V, V =50V, I =5A GS DS D Q Gate Source Charge 1.1 nC gs Q Gate Drain Charge 1.2 nC gd t Turn-On DelayTime 6 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==5500VV,, RR ==1100,, 22..55 nnss r GS DS L R =3 t Turn-Off DelayTime 18 ns GEN D(off) t Turn-Off Fall Time 2.5 ns f t I =5A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 15 ns Q I =5A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 53 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1. 0: October 2013 www.aosmd.com Page 2 of 6