AON2409 30V P-Channel MOSFET General Description Product Summary V The AON2409 combines advanced trench MOSFET DS -30V technology with a low resistance package to provide I (at V =-10V) -8A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =-10V) < 32m DS(ON) GS and battery protection applications. R (at V =-4.5V) < 53m DS(ON) GS RoHS and Halogen-Free Compliant DFN 2x2B Top View Bottom View D D D S D S Pin 1 D D G G Pin 1 S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS T =25C -8 Continuous Drain A I D G T =70C Current -6.3 A A C Pulsed Drain Current I -32 DM T =25C 2.8 A P W D A Power Dissipation T =70C 1.8 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 37 44 C/W R A D JA Maximum Junction-to-Ambient Steady-State 66 79 C/W Rev 2.0 : October 2014 www.aosmd.com Page 1 of 5 AON2409 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V , I =-250A -1.1 -1.75 -2.3 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -32 A GS DS D(ON) V =-10V, I =-8A 26.5 32 GS D m R Static Drain-Source On-Resistance T =125C 33.6 41 DS(ON) J V =-4.5V, I =-6A 42 53 m GS D g Forward Transconductance V =-5V, I =-8A 20 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.7 -1 V S GS SD I Maximum Body-Diode Continuous Current 3.5 A S DYNAMIC PARAMETERS C Input Capacitance 530 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 114 pF oss GS DS C Reverse Transfer Capacitance 75 pF rss R Gate resistance V =0V, V =0V, f=1MHz 11 22 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 12 14.5 nC g Q (4.5V) Total Gate Charge 6 7.5 nC g V =-10V, V =-15V, I =-8A GS DS D Q Gate Source Charge 1.8 nC gs Q Gate Drain Charge 3 nC gd t Turn-On DelayTime 7.7 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==--1100VV,, VV ==--1155VV,, RR ==11..88,, 55..55 nnss r GS DS L R =3 t Turn-Off DelayTime 26.3 ns GEN D(off) t Turn-Off Fall Time 11.5 ns f t I =-8A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 12.2 ns Q I =-8A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 25.4 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any given DSM JA application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2.0 : October 2014 www.aosmd.com Page 2 of 5