AON6932A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5V V 30V 30V GS DS Low Gate Charge I (at V =10V) 28A 42A D GS High Current Capability R (at V =10V) <5m <2.5m DS(ON) GS RoHS and Halogen-Free Compliant R (at V = 4.5V) <8.5m <3.2m DS(ON) GS 100% UIS Tested Application 100% Rg Tested DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial DFN5X6B Top View Bottom View PIN1 PIN1 Top View Bottom View Bottom View Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max Q1 Max Q2 Units Drain-Source Voltage V 30 V DS GGaattee--SSoouurrccee VVoollttaaggee VV 2200 2200 VV GS T =25C 28 42 Continuous Drain C I D G Current T =100C 22 33 A C C Pulsed Drain Current I 112 168 DM T =25C 22 36 A Continuous Drain I A DSM Current T =70C 17 29 A C Avalanche Current I 32 70 A AS C Avalanche Energy L=0.05mH E 26 123 mJ AS V Spike 100ns V 36 36 V DS SPIKE T =25C 31 78 C P W D B Power Dissipation T =100C 12 31 C T =25C 3.6 4.3 A P W DSM A T =70C Power Dissipation 2.3 2.7 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 Units A t 10s 29 24 35 29 Maximum Junction-to-Ambient C/W R JA A D Maximum Junction-to-Ambient Steady-State 56 50 67 60 C/W Maximum Junction-to-Case Steady-State R 3.3 1.2 4 1.6 C/W JC Rev 0 : Nov. 2012 www.aosmd.com Page 1 of 10 AON6932A Q1 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.4 1.8 2.2 V GS(th) DS GS D V =10V, I =20A 4.1 5 GS D m R Static Drain-Source On-Resistance T =125C 5.6 6.8 DS(ON) J V =4.5V, I =20A 6.7 8.5 m GS D V =5V, I =20A g Forward Transconductance 91 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 28 A S DYNAMIC PARAMETERS C Input Capacitance 1037 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 441 pF oss GS DS C Reverse Transfer Capacitance 61 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 1.5 2.3 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 15.5 22 nC g Q (4.5V) Total Gate Charge 6.8 10 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 3.0 nC gs Q Gate Drain Charge 3.6 nC gd t Turn-On DelayTime 5.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 3.3 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 1188 nnss D(off) GEN t Turn-Off Fall Time 4.3 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 12.7 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 17.2 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R 10s and the maximum allowed junction temperature of 150 C. The value in any given application DSM JA depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is limited by package. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Nov. 2012 www.aosmd.com Page 2 of 10