AON7242 40V N-Channel MOSFET General Description Product Summary V 40V The AON7242 uses trench MOSFET technology that is DS uniquely optimized to provide the most efficient high I (at V =10V) 50A D GS frequency switching performance.Power losses are R (at V =10V) < 3.9m DS(ON) GS minimized due to an extremely low combination of R (at V =4.5V) < 5.8m DS(ON) GS R and Crss.In addition,switching behavior is well DS(ON) controlled with aSchottky styl soft recovery body diode. 100% UIS Tested 100% R Tested g DFN 3.3x3.3 EP Top View Bottom View D Top View 1 8 2 7 3 6 G 4 5 S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 4400 VV DDSS Gate-Source Voltage V 20 V GS T =25C Continuous Drain 50 C I D G Current T =100C 39 A C C Pulsed Drain Current I 255 DM T =25C 30 A Continuous Drain I A DSM T =70C Current 25 A C Avalanche Current I , I 48 A AS AR C Avalanche energy L=0.1mH E , E 115 mJ AS AR T =25C 83 C P W D B T =100C Power Dissipation 33 C T =25C 6.2 A P W DSM A Power Dissipation T =70C 4 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 16 20 C/W R A D JA Maximum Junction-to-Ambient Steady-State 45 55 C/W Maximum Junction-to-Case Steady-State R 1.1 1.5 C/W JC Rev 0: July 2011 www.aosmd.com Page 1 of 6 AON7242 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 40 V D GS DSS V =40V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V , I =250A Gate Threshold Voltage 1.3 1.8 2.3 V GS(th) DS GS D I On state drain current V =10V, V =5V 255 A GS DS D(ON) V =10V, I =20A 3.2 3.9 GS D m R Static Drain-Source On-Resistance T =125C 4.9 6.0 DS(ON) J V =4.5V, I =20A 4.5 5.8 m GS D V =5V, I =20A g Forward Transconductance 80 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.69 1 V S GS SD G I Maximum Body-Diode Continuous Current 50 A S DYNAMIC PARAMETERS C Input Capacitance 1575 1970 2365 pF iss V =0V, V =20V, f=1MHz C Output Capacitance 375 540 705 pF oss GS DS C Reverse Transfer Capacitance 12 41 70 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.8 1.2 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 21 26.5 32 nC g Q (4.5V) Total Gate Charge 9 11.9 15 nC g V =10V, V =20V, I =20A GS DS D Q Gate Source Charge 6.2 nC gs Q Gate Drain Charge 2.2 nC gd t Turn-On DelayTime 7 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==2200VV,, RR ==11,, 1166 nnss r GS DS L R =3 t Turn-Off DelayTime 23 ns GEN D(off) t Turn-Off Fall Time 3 ns f t I =20A, dI/dt=500A/s 12 rr Body Diode Reverse Recovery Time F 16 20 ns Q I =20A, dI/dt=500A/s 36 nC rr Body Diode Reverse Recovery Charge F 47 58 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any given DSM JA application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: July 2011 www.aosmd.com Page 2 of 6