AON7460 300V,4A N-Channel MOSFET General Description Product Summary The AON7460 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of V 350V 150 DS performance and robustness in popular AC-DC I (at V =10V) 4A D GS applications.By providing low R , C and C along with DS(on) iss rss R (at V =10V) < 0.83 DS(ON) GS guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g DDFFNN 33xx33AA EEPP TToopp VViieeww TToopp VViieeww BBoottttoomm VViieeww DD SS DD SS DD SS DD GG DD GG PPiinn 11 SS Absolute Maximum Ratings T =25C unless otherwise noted AA Parameter Symbol Maximum Units Drain-Source Voltage V 300 V DS Gate-Source Voltage V 30 V GS T =25C Continuous Drain 4 C I D B T =100C Current 2.5 A C C Pulsed Drain Current I 13 DM T =25C 1.2 A Continuous Drain I A DSM Current T =70C 1.0 A C Avalanche Current I 2.1 A AR C Repetitive avalanche energy E 66 mJ AR G Single pulsed avalanche energy E 132 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns T =25C 33 W C P D B T =100C Power Dissipation 13 W C T =25C 3.1 A P W DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -50 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 30 40 C/W R A D JA Maximum Junction-to-Ambient Steady-State 60 75 C/W Maximum Junction-to-Case Steady-State R 3.1 3.7 C/W JC Rev 0: Mar 2011 www.aosmd.com Page 1 of 6 AON7460 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 300 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 350 V D GS J BV DSS o Zero Gate Voltage Drain Current ID=250A, VGS=0V 0.3 V/ C /TJ V =300V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =240V, T =125C 10 DS J I Gate-Body leakage current V =0V, V =30V 100 GSS DS GS n V V =5V, I =250A Gate Threshold Voltage 3.3 3.9 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =1.2A 0.67 0.83 DS(ON) GS D g Forward Transconductance V =40V, I =1.2A 2 S DS D FS I =1A,V =0V V Diode Forward Voltage 0.76 1 V SD S GS I Maximum Body-Diode Continuous Current 4 A S I Maximum Body-Diode Pulsed Current 13 A SM DYNAMIC PARAMETERS C Input Capacitance 240 310 380 pF iss V =0V, V =25V, f=1MHz C Output Capacitance GS DS 30 45 60 pF oss C Reverse Transfer Capacitance 3.0 pF rss V =0V, V =0V, f=1MHz R Gate resistance 1.4 2.9 4.5 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 5.4 6.8 8.2 nC g V =10V, V =240V, I =1.2A Q Gate Source Charge GS DS D 1.9 nC gs Q Gate Drain Charge 2.0 nC gd t Turn-On DelayTime 17 ns D(on) t Turn-On Rise Time V =10V, V =150V, I =1.2A, 8 ns r GS DS D RR ==2255 tt TTuurrnn--OOffff DDeellaayyTTiimmee GG 2299 nnss DD((ooffff)) t Turn-Off Fall Time 12 ns f t I =1.2A,dI/dt=100A/s,V =100V 60 88 120 rr Body Diode Reverse Recovery Time F DS ns Q I =1.2A,dI/dt=100A/s,V =100V 0.20 0.29 0.40 C rr Body Diode Reverse Recovery Charge F DS 2 A. The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power Dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any given DSM JA application depends on the user s specific board design. B. The power dissipation PD is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) 2 G.These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A H. L=60mH, I =2.1A, V =150V, R =10, Starting T =25 C. AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Mar 2011 www.aosmd.com Page 2 of 6