AON7462 300V,2.5A N-Channel MOSFET General Description Product Summary The AON7462 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of 350V 150 V DS performance and robustness in popular AC-DC 2.5A I (at V =10V) D GS applications.By providing low R , C and C along with DS(on) iss rss < 1.5 R (at V =10V) DS(ON) GS guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g DFN 3x3A EP Top View Bottom View D G Pin 1 S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 300 V DS V Gate-Source Voltage 30 V GS T=25C 2.5 Continuous Drain C I D B Current T =100C A 1.6 C C Pulsed Drain Current I 7.2 DM T =25C 0.9 Continuous Drain A I A DSM Current T =70C 0.7 A C Avalanche Current I 1.4 A AR C Repetitive avalanche energy E 29 mJ AR G Single pulsed avalanche energy E 58 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns W T =25C 25 C P B D Power Dissipation W T =100C 10 C T =25C 3.1 A P W A DSM Power Dissipation T =70C 2 A T , T Junction and Storage Temperature Range -50 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 4.2 5 C/W JC Rev0: Feb 2011 www.aosmd.com Page 1 of 6 AON7462 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 300 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 350 V D GS J BV DSS o Zero Gate Voltage Drain Current ID=250A, VGS=0V 0.3 V/ C /TJ V =300V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =240V, T =125C 10 DS J I V =0V, V =30V 100 Gate-Body leakage current n GSS DS GS V V =5V I =250A 3.5 4.2 4.5 V Gate Threshold Voltage GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =0.9A 1.2 1.5 DS(ON) GS D g Forward Transconductance V =40V, I =0.9A 1.5 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.8 1 V SD S GS I Maximum Body-Diode Continuous Current 2.5 A S I Maximum Body-Diode Pulsed Current 9A SM DYNAMIC PARAMETERS C Input Capacitance 155 197 240 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 20 30 40 pF oss GS DS C Reverse Transfer Capacitance 2pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.9 3.8 5.7 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 3.5 4.6 5.6 nC g Q V =10V, V =240V, I =0.9A Gate Source Charge 1.3 nC gs GS DS D Q Gate Drain Charge 1.5 nC gd t Turn-On DelayTime 17 ns D(on) t Turn-On Rise Time V =10V, V =150V, I =0.9A, 8ns r GS DS D t R =25 Turn-Off DelayTime G 26 ns D(off) t Turn-Off Fall Time 13 ns f t I =0.9A,dI/dt=100A/s,V =100V 62 95 125 rr Body Diode Reverse Recovery Time F DS ns Q I =0.9A,dI/dt=100A/s,V =100V 0.14 0.22 0.3 C rr Body Diode Reverse Recovery Charge F DS 2 A. The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The Power JA A Dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150C. The value in any given application DSM JA depends on the user s specific board design. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep initial T J(MAX) J =25C. D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) 2 G.These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A H. L=60mH, I =1.4A, V =150V, R =10 , Starting T =25C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Feb 2011 www.aosmd.com Page 2 of 6