AON7611 30V Complementary MOSFET General Description Product Summary N-channel P-channel The AON7611 uses advanced trench technology to provide excellent R and low gate charge. The DS(ON) V (V) = 30V V (V) = -30V DS DS complementary MOSFETs may be used in inverter and I = 9.0A I = -18.5A (V = 10V) D D GS other applications. R < 50m R < 38m (V = 10V) DS(ON) DS(ON) GS R < 70m R < 62m (V = 4.5V) DS(ON) DS(ON) GS 100% UIS Tested 100% R Tested g D2 D1 DFN 3x3 EP Top View Bottom View Top View D2 S2 G2 D2 D1 S1 G2 G1 G1 D1 Pin 1 S2 S1 N-channel P-channel Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max N-channel Max P-channel Units Parameter Symbol Max N-channel Max P-channel Units Drain-Source Voltage V 30 -30 V DS Gate-Source Voltage V 20 20 V GS T =25C 9 -18.5 A Continuous Drain I D Current T =100C 5.5 -11.5 A C A Pulsed Drain Current I 20 -35 DM T =25C 4 -5 Continuous Drain A I DSM A Current T =70C 3 -4 A C A Avalanche Current I 7 -17 AR C mJ Repetitive avalanche energy L=0.1mH E 2 14 AR T =25C 7 20.8 A P W D B Power Dissipation T =100C 2.8 8.3 A T =25C 1.5 1.5 A P W DSM A T =70C Power Dissipation 0.9 0.9 A Junction and Storage Temperature Range T , T -55 to 150 -55 to 150 C J STG Thermal Characteristics: N-channel Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 40 50 C/W R JA A D Steady-State Maximum Junction-to-Ambient 70 85 C/W B Steady-State R 15 18 C/W Maximum Junction-to-Case JC Thermal Characteristics: P-channel Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 40 50 C/W R A D JA Maximum Junction-to-Ambient Steady-State 70 85 C/W B Steady-State Maximum Junction-to-Case R 5 6 C/W JC Rev 1: Dec 2011 www.aosmd.com Page 1 of 11 AON7611 N-channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V , I =250A Gate Threshold Voltage 1.5 2 2.5 V GS(th) DS GS D I On state drain current V =10V, V =5V 20 A GS DS D(ON) V =10V, I =4A 40 50 GS D m R Static Drain-Source On-Resistance T =125C 64 80 DS(ON) J V =4.5V, I =3A 53 70 m GS D V =5V, I =4A g Forward Transconductance 11 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.79 1 V S GS SD I Maximum Body-Diode Continuous Current 9.5 A S DYNAMIC PARAMETERS C Input Capacitance 170 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 35 pF oss GS DS C Reverse Transfer Capacitance 23 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.7 3.5 5.3 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 4.05 10 nC g Q (4.5V) Total Gate Charge 2 6 nC g V =10V, V =15V, I =4A GS DS D Q Gate Source Charge 0.55 nC gs Q Gate Drain Charge 1 nC gd t Turn-On DelayTime 4.5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1155VV,, RR ==33..7755,, 11..55 nnss r GS DS L R =3 t Turn-Off DelayTime 18.5 ns GEN D(off) t Turn-Off Fall Time 15.5 ns f t I =4A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 7.5 ns Q I =4A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 2.5 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 150 C may be used if the PCB allows it. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. J(MAX) G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The SOA A curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Dec 2011 www.aosmd.com Page 2 of 11