DMP3130LQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Low On-Resistance
I
D
V R
(BR)DSS DS(ON) max
Low Gate Threshold Voltage
T = +25C
A
Low Input Capacitance
-3.5A
77m@ V = -10V
GS
Fast Switching Speed
-30V 95m@ V = -4.5V -3.0A
GS
Low Input/Output Leakage
150m@ V = -2.5V -2.4A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications Mechanical Data
This MOSFET has been designed to meet the stringent Case: SOT23
requirements of Automotive applications. It is qualified to AECQ101,
Case Material: Molded Plastic, Green Molding Compound.
supported by a PPAP and is ideal for use in:
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
DC-DC Converters
Terminals: Finish Matte Tin Annealed over Copper
Power Management Functions
Leadframe. Solderable per MIL-STD-202, Method 208
Analog Switch
Terminal Connections: See Diagram
Weight: 0.009 grams (Approximate)
SOT23
D
D
G
G S
S
Top View Equivalent Circuit Top View
Ordering Information (Note 5)
Part Number Case Packaging
DMP3130LQ-7 SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMP3130LQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V -30 V
DSS
Gate-Source Voltage V 12 V
GSS
Steady T = +25C -3.5
A
I A
D
State -2.6
T = +70C
A
Continuous Drain Current (Note 6) V = -4.5V
GS
T = +25C -4.1
A
t<10s A
I
D
-3.2
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 6) I -1.6 A
S
Pulsed Drain Current (10s pulse, duty cycle = 1%) I -20 A
DM
Thermal Characteristics
Characteristic Symbol Value Units
0.7
T = +25C
A
Total Power Dissipation (Note 6) P W
D
0.4
T = +70C
A
Steady State 184
Thermal Resistance, Junction to Ambient (Note 6) C/W
R
JA
t<10s 115
1.3
T = +25C
A
Total Power Dissipation (Note 7) P W
D
0.8
T = +70C
A
Steady State 94
Thermal Resistance, Junction to Ambient (Note 7)
R
JA
t<10s 61
C/W
Thermal Resistance, Junction to Case 25
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A
DSS GS D
Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V
DSS DS GS
Gate-Body Leakage I 100 nA V = 12V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V -0.6 -1.3 V V = V , I = -250A
GS(TH) DS GS D
59 77
V = -10V, I = -4.2A
GS D
Static Drain-Source On-Resistance 73 95 m
R V = -4.5V, I = -4A
DS(ON) GS D
115 150
V = -2.5V, I = -3A
GS D
Forward Transconductance 8 S
g V = -5V, I = -4A
fs DS D
Source-Drain Diode Forward Voltage -0.8 -1.25 V
V V = 0V, I = -3.0A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance 432 864 pF
C
iss
V = -15V, V = 0V
DS GS
Output Capacitance C 87 174 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C 62 124 pF
rss
Gate Resistance R 4.04 V = 0V, V = 0V, f = 1.0MHz
G DS GS
SWITCHING CHARACTERISTICS (Note 9)
5.9 11.8 V = -15V, V = -4.5V, I = -4.0A
DS GS D
Total Gate Charge
Q
G
12 24
VDS = -15V, VGS = -10V, ID = -4.0A
nC
Gate-Source Charge 1.0 2.0
Q
GS
V = -15V, V = -4.5V, I = -4.0A
DS GS D
Gate-Drain Charge 3.1 6.2
Q
GD
Turn-On Delay Time 4.6 9.2
t
D(ON)
Rise Time 6.5 13.0
t V = -15V, V = -10V,
R DS GS
ns
Turn-Off Delay Time 27.8 55.6
t I = -1A, R = 6.0
D(OFF) D G
Fall Time t 15.0 30.0
F
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing
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DMP3130LQ March 2016
Diodes Incorporated
www.diodes.com
Document number: DS38728 Rev. 1 - 2