MAX2010 19-2930 Rev 0 8/03 500MHz to 1100MHz Adjustable RF Predistorter General Description Features The MAX2010 adjustable RF predistorter is designed to Up to 12dB ACPR Improvement* improve power amplifier (PA) adjacent-channel power Independent Gain and Phase Expansion Controls rejection (ACPR) by introducing gain and phase expan- Gain Expansion Up to 6dB sion in a PA chain to compensate for the PAs gain and phase compression. With its +23dBm maximum input Phase Expansion Up to 21 power level and wide adjustable range, the MAX2010 500MHz to 1100MHz Frequency Range can provide up to 12dB of ACPR improvement for Exceptional Gain and Phase Flatness power amplifiers operating in the 500MHz to 1100MHz Group Delay <2.4ns (Gain and Phase Sections frequency band. Higher frequencies of operation can be achieved with this ICs counterpart, the MAX2009. Combined) 0.03ns Group Delay Ripple Over a 100MHz Band The MAX2010 is unique in that it provides up to 6dB of gain expansion and 21 of phase expansion as the input Capable of Handling Input Drives Up to +23dBm power is increased. The amount of expansion is config- On-Chip Temperature Variation Compensation urable through two independent sets of control: one set Single +5V Supply adjusts the gain expansion breakpoint and slope, while the second set controls the same parameters for phase. Low Power Consumption: 75mW (typ) With these settings in place, the linearization circuit can Fully Integrated into Small 28-Pin Thin QFN be run in either a static set-and-forget mode, or a more Package sophisticated closed-loop implementation can be *Performance dependent on amplifier, bias, and modulation. employed with real-time software-controlled distortion correction. Hybrid correction modes are also possible Ordering Information using simple lookup tables to compensate for factors such as PA temperature drift or PA loading. PART TEMP RANGE PIN-PACKAGE The MAX2010 comes in a 28-pin thin QFN exposed MAX2010ETI-T -40C to +85C 28 Thin QFN-EP* pad (EP) package (5mm x 5mm) and is specified for *EP = Exposed paddle. the extended (-40C to +85C) temperature range. Applications Functional Diagram/ Pin Configuration cdma2000, GSM/EDGE, and iDEN Base Stations Feed-Forward PA Architectures Digital Baseband Predistortion Architectures 28 27 26 25 24 23 22 Military Applications GND* 1 21 V CCG GAIN GND* 2 20 GND* CONTROL ING 3 19 PBRAW GND* 4 18 PBEXP MAX2010 GND* 5 17 PBIN PHASE OUTP 6 16 GND* CONTROL GND* 7 15 V CCP 8 9 10 11 12 13 14 cdma2000 is a trademark of Telecommunications Industry *INTERNALLY CONNECTED TO EXPOSED GROUND PADDLE. Assoc. Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct at 1-888-629-4642, or visit Maxims website at www.maxim-ic.com. GND* GND* INP OUTG GND* GND* PFS1 GCS PFS2 GFS PDCS1 GBP PDCS2 GND*500MHz to 1100MHz Adjustable RF Predistorter ABSOLUTE MAXIMUM RATINGS V , V to GND..............................................-0.3V to +5.5V Continuous Power Dissipation (T = +70C) CCG CCP A ING, OUTG, GCS, GFS, GBP to GND......-0.3V to (V + 0.3V) 28-Pin Thin QFN-EP CCG INP, OUTP, PFS , PDCS , PBRAW, (derate 21mW/C above +70C)...............................1667mW PBEXP, PBIN to GND ............................-0.3V to (V + 0.3V) Operating Temperature Range ...........................-40C to +85C CCP Input (ING, INP, OUTP, OUTG) Level ............................+23dBm Junction Temperature......................................................+150C PBEXP Output Current........................................................1mA Storage Temperature Range .............................-65C to +150C Lead Temperature (soldering 10s) ..................................+300C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS (MAX2010 EV kit V = V = +4.75V to +5.25V no RF signal applied INP, ING, OUTP, OUTG are AC-coupled and terminated to CCG CCP 50 . V = open PBEXP shorted to PBRAW V = V = 0.8V V = V = V = GND V = V T = -40C to PF S1 PDCS1 PDCS2 PBIN GBP GCS GFS CCG A +85C. Typical values are at V = V = +5.0V, T = +25C, unless otherwise noted.) CCG CCP A PARAMETER CONDITIONS MIN TYP MAX UNITS Supply Voltage V , V 4.75 5.25 V CCG CCP V 5.8 7 CCP Supply Current mA V 10 12.1 CCG PBIN, PBRAW 0 V CCP Analog Input Voltage Range V GBP, GFS, GCS 0 V CCG V = V = V = 0V -2 +2 GFS GCS PBRAW Analog Input Current V = 0 to +5V -100 +170 A GBP V = 0 to +5V -100 +220 PBIN Logic-Input High Voltage PDCS1, PDCS2 (Note 1) 2.0 V Logic-Input Low Voltage PDCS1, PDCS2 (Note 1) 0.8 V Logic Input Current -2 +2 A 2 MAX2010