X-On Electronics has gained recognition as a prominent supplier of 2N7002ET MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002ET MOSFETs are a product manufactured by AnBon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002ET AnBon

2N7002ET electronic component of AnBon
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See Product Specifications
Part No.2N7002ET
Manufacturer: AnBon
Category: MOSFETs
Description: MOSFET SOT-523 RoHS
Datasheet: 2N7002ET Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7002ET from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002ET and other electronic components in the MOSFETs category and beyond.

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The 2N7002ET with MOSFET SOT-523 RoHS is a small-signal MOSFET manufactured by AnBon. It is a low-voltage N-channel enhancement mode device component that has a low on-state resistance. This device is ideal for use in switching and amplitude Li-ion battery charging operations, as well as for low-side switching applications. It has an RDS(ON) of 100mO @ VGS=2.5V and 625mO @ VGS=4.5V Ultra-Low on-resistance, extremely low-threshold voltage, and an ultra-low-gate charge Rg. It is RoHS compliant and suitable for use in various industrial, consumer, automotive, and medical applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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