Advanced Power Electronics Corp. AP18T10AGH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching Characteristics BV 100V DSS Low Gate Charge R 160m DS(ON) G RoHS-compliant, halogen-free I 9A D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP18T10GAH-HF-3 is in the TO-252 package which is widely preferred for G D S TO-252 (H) commercial and industrial surface mount applications such as medium-power DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 100 V DS V Gate-Source Voltage 20 V GS 3 I at T =25C Continuous Drain Current 9 A D C 3 I at T =100C Continuous Drain Current 5.6 A D C 1 I Pulsed Drain Current 30 A DM P at T =25C Total Power Dissipation 28 W D C P at T =25C Total Power Dissipation 2 W D A T Storage Temperature Range -55 to 150 C STG T Operating Junction Temperature Range -55 to 150 C J Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 4.5 C/W 3 62.5 C/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Ordering Information AP18T10AGH-HF-3TR RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) 2010 Advanced Power Electronics Corp. USA 201006011-3 1/5 www.a-powerusa.comAdvanced Power Electronics Corp. AP18T10AGH-HF-3 Electrical Specifications at T =25C (unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =250uA 100 - - V DSS GS D 2 R Static Drain-Source On-Resistance V = 10V, I = 5A - - 160 m DS(ON) GS D V = 4.5V, I = 1A - - 225 m GS D V Gate Threshold Voltage V =V , I =250uA 1 - 3 V GS(th) DS GS D g Forward Transconductance V =10V, I =5A - 5.0 - S fs DS D I Drain-Source Leakage Current uA V =80V, V =0V - - 25 DSS DS GS o Drain-Source Leakage Current (T =125 C) uA j V =80V ,V =0V - - 250 DS GS I nA Gate-Source Leakage V =20V - - 100 GSS GS 2 nC Q Total Gate Charge I = 5A - 6 9.6 g D nC Q Gate-Source Charge V =80V - 1.7 - gs DS Q Gate-Drain Mille) Charge V =4.5V - 4 - nC gd GS 2 - ns t Turn-on Delay Time V =50V - 6 d(on) DS t Rise Time I = 5A - 10 - ns r D ns t Turn-off Delay Time R =3.3 , - 14.5 - d(off) G Fall Time V = 10V - 4 - ns t f GS C Input Capacitance V =0V - 400 640 pF iss GS C Output Capacitance V =25V - 55 - pF oss DS C Reverse Transfer Capacitance f=1.0MHz - 35 - pF rss Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I = 5A, V =0V - - 1.3 V SD S GS 2 t Reverse Recovery Time I = 5A, V =0V - 40 - ns rr S GS Q Reverse Recovery Charge dI/dt=100A/s - 75 - nC rr Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300s , duty cycle < 2% 2 3.Surface mounted on 1 in copper pad of FR4 board, THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2010 Advanced Power Electronics Corp. USA 2/5 www.a-powerusa.com