Advanced Power Electronics Corp. AP2306AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate Drive D Lower On-resistance BV 30V DSS Surface-Mount Device R 35m DS(ON) G RoHS-compliant, Halogen-free I 5A D S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. S The AP2306AGN-HF-3 is in the popular SOT-23 small surface-mount package SOT-23 G which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches. Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 30 V DS V Gate-Source Voltage 8 V GS 3 I at T =25C Continuous Drain Current 5 A D A 3 I at T = 70C Continuous Drain Current 4 A D A 1 I Pulsed Drain Current 20 A DM P at T =25C Total Power Dissipation 1.38 W D A T Storage Temperature Range -55 to 150 C STG T Operating Junction Temperature Range -55 to 150 C J Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 90 C/W Ordering Information AP2306AGN-HF-3TR : in RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel 2009 Advanced Power Electronics Corp. USA 200810141-3 1/5 www.a-powerusa.comAdvanced Power Electronics Corp. AP2306AGN-HF-3 Electrical Specifications at T =25C (unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =250uA 30 - - V DSS GS D 2 R Static Drain-Source On-Resistance V =4.5V, I =5A - - 35 m DS(ON) GS D V =2.5V, I =2.6A - - 50 m GS D V =1.8V, I =1.0A - - 80 m GS D V Gate Threshold Voltage V =V , I =250uA 0.3 - 1.2 V GS( h) DS GS D g Forward Transconductance V =5V, I =5A - 9 - S fs DS D I Drain-Source Leakage Current uA DSS V =30V, V =0V - - 1 DS GS o Drain-Source Leakage Current (T=70 C) V =24V ,V =0V - - 25 uA j DS GS I nA Gate-Source Leakage V = 8V - - 100 GSS GS 2 Q Total Gate Charge I =5A - 8.3 15 nC g D Q Gate-Source Charge V =16V - 1 - nC gs DS nC Q Gate-Drain Mille) Charge V =4.5V - 3 - gd GS 2 t Turn-on Delay Time V =15V - 5 - ns d(on) DS t Rise Time I =1A - 9 - ns r D t Turn-off Delay Time R =3.3 , V =5V - 20 - ns d(off) G GS ns t Fall Time R =15 - 5 - f D C Input Capacitance V =0V - 400 1050 pF iss GS C Output Capacitance V =25V - 90 - pF oss DS C Reverse Transfer Capacitance f=1.0MHz - 70 - pF rss Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I =1.2A, V =0V - - 1.2 V SD S GS Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse test - pulse width < 300s , duty cycle < 2% 2 3. Surface mounted on 1in copper pad of FR4 board, t <10sec 270C/W when mounted on minimum copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2009 Advanced Power Electronics Corp. USA 2/5 www.a-powerusa.com